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首页> 外文期刊>Materials Science and Engineering >Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications
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Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

机译：用于高k介电应用的硅衬底上生长的姜黄素膜的提取和介电性能

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Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ～220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal-insulator-semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1 -1000 kHz and was analysed in-terms of dielectric impedance Z'(ω) and modulus M'(ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices.
机译：从姜黄粉中提取姜黄素并真空蒸发，以在p-Si和玻璃基板上制备薄膜以进行介电和光学研究。所制备的非晶膜的光吸收光谱不同于分子膜的光吸收光谱，这是由〜220和540 nm之间的很宽的吸收带所确定的。膜的光吸收的起始能量是通过使用Hamberg等人（2002）计算的。方法。对这种材料的介电性能进行了系统的研究，以供将来在金属-绝缘体-半导体MIS应用领域中的环保应用。在1 -1000 kHz的频率范围内研究了复介电性能，并以介电阻抗Z'（ω）和模量M'（ω）的形式进行了分析。通常，姜黄素络合物可被视为高k材料，可用于环境友好的微电子器件生产中。

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