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Structural and luminescence correlation of annealed Er-ZnO/Si thin films deposited by AACVD process

机译:通过AACVD工艺沉积的退火Er-ZnO / Si薄膜的结构和发光相关性

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摘要

Er doped ZnO thin films have been synthesized from zinc acetates dihydrate (C_4H_6O_4Zn-2H_2O) and Erbium tris (2,2,6,6-tetramethyl-3,5-heptadionate) (Er(TMHD)_3) by aerosol assisted chemical vapor deposition AACVD atmospheric pressure technique. Films were deposited in the temperature range of [370-500 C] on Si (111) substrate. Nano-disk shaped grains were grown on the top of the film surface. The morphology of the as-deposited films was found to be dependent on the substrate temperature. After annealing in air atmosphere, XRD patterns revealed a highly oriented c-axis EnZnO films with hexagonal wurtzite structure without any second phase. Under 488 nm excitation, the intra 4f-4f green emission (~2H_(11/2), ~4S_(3/2)→ ~4I_(15/2) transitions) gradually increased with increasing annealing temperature. Also, the local structure of Er changes to a pseudo-octahedral structure with C_(4v) symmetry. The ZnO film with 2.504 at.% Er~(3+) doping has the best crystalline structure and the best resolved PL spectra. Using 325 nm excitation, all the samples showed an ultraviolet emission centered at 380 nm originating from a near band EDGE emission and a broad band green emission centered at 520 nm from deep levels. The optical response was correlated with crystallinity of the synthesized thin films.
机译:do掺杂的ZnO薄膜是由二水合醋酸锌(C_4H_6O_4Zn-2H_2O)和三b(2,2,6,6-四甲基-3,5-庚二酸酯)(Er(TMHD)_3)通过气溶胶辅助化学气相沉积法合成的AACVD大气压技术。将膜在[370-500 C]的温度范围内沉积在Si(111)衬底上。纳米盘状晶粒生长在薄膜表面的顶部。发现沉积膜的形态取决于衬底温度。在空气中退火后,XRD图谱显示了具有六方纤锌矿结构的高取向c轴EnZnO薄膜,没有任何第二相。在488 nm激发下,随着退火温度的升高,内部4f-4f的绿色发射(〜2H_(11/2),〜4S_(3/2)→〜4I_(15/2)跃迁)逐渐增加。同样,Er的局部结构变为具有C_(4v)对称性的伪八面体结构。掺杂2.504 at。%Er〜(3+)的ZnO薄膜具有最佳的晶体结构和最佳的PL光谱。使用325 nm激发,所有样品均显示出以近波段EDGE发射为中心的以380 nm为中心的紫外线发射,以及从深处发射出以520 nm为中心的宽带绿色发射。光学响应与合成薄膜的结晶度相关。

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  • 来源
    《Materials Science and Engineering》 |2013年第17期|1124-1129|共6页
  • 作者单位

    Laboratoire Georessouces, Materiaux, Environnement et Changements Globaux. Faculte des Sciences de Sfax, Universite de Sfax, 3018 Sfax, Tunisia;

    Laboratoire de chimie industrielle, Ecole Nationale d'ingenieurs de Sfax Universite de Sfax, 3018 Sfax, Tunisia;

    Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia;

    Laboratoire des Materiaux et du Genie Physique, 3 Parvis Louis Neel BP 257, 38016 Grenoble, France;

    Laboratoire Georessouces, Materiaux, Environnement et Changements Globaux. Faculte des Sciences de Sfax, Universite de Sfax, 3018 Sfax, Tunisia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ZnO; Erbium; AACVD; Photoluminescence;

    机译:氧化锌;铒;AACVD;光致发光;

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