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Photovoltaic heterojunctions of inorganic semiconductors in the defective limit

机译：缺陷极限内无机半导体的光伏异质结

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A large amount of current research in thin film photovoltaics based on inorganic semiconductors aims to deposit and process these active layers using inexpensive and low temperature processing methods resulting in high densities of electronic states in the bandgap associated with structural and point defects. We define semiconductors in which the Fermi level is pinned throughout the bulk as being at the defective limit and explore the consequences for heterojunctions designed to separate photocarriers. Using this novel concept of the defective limit, heterojunction band offsets can be predicted for less-common materials such as the earth-abundant materials also under intense investigation. Because of the Fermi level pinning in the bulk, only Type II heterojunctions will separate charges but the high defect concentrations will also result in small minority carrier diffusion lengths. These limitations require the use of nanostructured device architectures for cells of such materials with appreciable power conversion efficiency.
机译：当前基于无机半导体的薄膜光伏技术的大量研究旨在使用廉价且低温的处理方法沉积和处理这些有源层，从而在带隙中产生高电子态密度，与结构和点缺陷相关。我们将费米能级固定在整个体中的半导体定义为有缺陷的极限，并探讨了用于分离光载流子的异质结的后果。使用这种缺陷极限的新颖概念，可以预测不常见材料的异质结带偏移，例如，在经过深入研究的情况下，富含地球的材料。由于费米能级固定在主体中，因此只有II型异质结会分离电荷，但高缺陷浓度也会导致少数载流子扩散长度变小。这些限制要求将纳米结构的器件架构用于这种材料的电池，并具有相当大的功率转换效率。

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