Optimization of parameters for silicon planar source of modulated infrared radiation

T. Piotrowski; V.K. Malyutenko; M. Wegrzecki; A.Czerwinski; H. Polakowski; A.M.Tykhonov

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Optimization of parameters for silicon planar source of modulated infrared radiation

机译：硅平面调制红外辐射源参数的优化

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We report on the performance of planar silicon diodes operating in the double injection mode and emitting modulated infrared radiation at temperature range above 300 K. Results present theoretical analysis and experimental verification of an optimization aimed at maximal difference between emissivity of this structure for cases with and without forward bias applied to p-n junction. Several advantages of the structures were shown: wide emission spectrum (3÷12 μm), short rise-fall time (300 μs), high operating temperature (≈400K). These planar photonic sources can be used as easily controlled sources of modulated infrared radiation in wide spectral range, image simulators, e.g. dynamic scene simulation devices with frame frequencies well above 200 Hz and for measurements of thermovision camera dynamic parameters.

机译：我们报告了平面硅二极管在双注入模式下工作并在300 K以上的温度范围内发射调制的红外辐射的性能。结果提供了针对这种结构的最大发射率之间最大差异的优化的理论分析和实验验证。没有对pn结施加正向偏压。显示了该结构的几个优点：发射光谱宽（3÷12μm），上升/下降时间短（300μs），工作温度高（≈400K）。这些平面光子源可用作在宽光谱范围内易于控制的调制红外辐射源，例如图像模拟器。动态场景模拟设备，其帧频远高于200 Hz，用于测量热像仪摄像机动态参数。

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来源
《Materials Science and Engineering》 |2011年第4期|p.363-367|共5页
作者
T. Piotrowski; V.K. Malyutenko; M. Wegrzecki; A.Czerwinski; H. Polakowski; A.M.Tykhonov;
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作者单位

Institute of Electron Technology. Al. Lotnikow 32/46.02-668 Warsaw, Poland;

Lashkaryov Institute of Semiconductor Physics. 45 Nauki Prospect, 03028 Kiev, Ukraine;

Institute of Electron Technology. Al. Lotnikow 32/46.02-668 Warsaw, Poland;

Institute of Electron Technology. Al. Lotnikow 32/46.02-668 Warsaw, Poland;

Military University of Technology, UI. S. Kaliskiego 2,00-908 Warsaw 49, Poland;

Lashkaryov Institute of Semiconductor Physics. 45 Nauki Prospect, 03028 Kiev, Ukraine;

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原文格式 PDF
正文语种 eng
中图分类
关键词
infrared radiation; emissivity; free carrier injection;

机译：红外辐射;发射率自由载流子注入;

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Optimization of parameters for silicon planar source of modulated infrared radiation

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