Electronic properties of BaTiO_3/4H-SiC interface

M. Sochacki; P. Firek; N. Kwietniewski; J. Szmidt; W. Rzodkiewicz

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Electronic properties of BaTiO_3/4H-SiC interface

机译：BaTiO_3 / 4H-SiC界面的电子性质

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摘要

The possibility of barium titanate (BaTiO_3) application in silicon carbide (SiC) technology has been elaborated in terms of the dielectric film quality and properties of the BaTiO_3/4H-SiC interface. High resistivity, high-k thin films containing La_2O_3 admixture were applied as gate insulator of metal-insulator-semiconductor (MIS) structure. The thin films were deposited by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO_3 + La_2O_3 (2 wt.%) target on 8 off-axis 4H-SiC (0001) epitaxial layers doped with nitrogen. The results of current-voltage and capacitance-voltage measurements are presented for MIS capacitors.

机译：钛酸钡（BaTiO_3）在碳化硅（SiC）技术中的应用可能性已经从介电膜质量和BaTiO_3 / 4H-SiC界面的性能方面进行了阐述。含La_2O_3的高电阻率高k薄膜被用作金属-绝缘体-半导体（MIS）结构的栅绝缘体。借助于烧结的BaTiO_3 + La_2O_3（2 wt。％）靶的射频等离子体溅射（RF PS）沉积薄膜到8个掺杂氮的离轴4H-SiC（0001）外延层上。给出了MIS电容器的电流-电压和电容-电压测量结果。

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来源
《Materials Science and Engineering》 |2011年第4期|p.301-304|共4页
作者
M. Sochacki; P. Firek; N. Kwietniewski; J. Szmidt; W. Rzodkiewicz;
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作者单位

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland;

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland;

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland;

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland;

Institute of Electron Technology, Al. Lotnikow 32/46,02-668 Warsaw, Poland;

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原文格式 PDF
正文语种 eng
中图分类
关键词
silicon carbide; barium titanate; electrical measurements; electron states;

机译：碳化硅钛酸钡电气测量;电子态;

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Electronic properties of BaTiO_3/4H-SiC interface

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