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首页> 外文期刊>Materials Science and Engineering >Solid-phase crystallization kinetics and grain structure during thermal annealing of a-Si:H grown by chemical vapor deposition
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Solid-phase crystallization kinetics and grain structure during thermal annealing of a-Si:H grown by chemical vapor deposition

机译：化学气相沉积生长的a-Si：H热退火过程中的固相结晶动力学和晶粒结构

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摘要

Solid-phase crystallization kinetics are examined during thermal annealing of as-deposited hydrogenated amorphous silicon (a-Si:H) thin films deposited by hot-wire chemical vapor deposition (HWCVD) and plasma-enhanced chemical vapor deposition (PECVD). The influence of deposition temperature of HWCVD material on crystallization is also considered. Real-time observation of the crystallization process using in situ transmission electron microscope heating allowed tracking of the crystalline volume fraction and grain number density by image-processing methods. Beyond an initial incubation period, roughly constant grain nucleation rate and growth velocity are observed. Extrapolation from early stages of crystallization allows estimation of the final average grain sizes. PECVD material shows a much lower nucleation rate than does HWCVD material under the same annealing conditions, whereas the grain growth velocities are comparable, leading to dramatically larger grain sizes in PECVD material. X-ray diffraction line widths from PECVD material are broader compared to HWCVD material. The diffraction line broadening is primarily determined by intragranular defect structure, rather than grain size. Low-temperature preannealing reduced the final XRD line widths of HWCVD material, indicating an influence on defect structure or density. Lattice contraction during crystallization of HWCVD material is observed to be independent of the initial hydrogen content.
机译：在通过热线化学气相沉积（HWCVD）和等离子体增强化学气相沉积（PECVD）沉积的氢化非晶硅（a-Si：H）薄膜的热退火过程中，检查了固相结晶动力学。还考虑了HWCVD材料的沉积温度对结晶的影响。使用原位透射电子显微镜加热实时观察结晶过程，可以通过图像处理方法跟踪结晶体积分数和晶粒数密度。在最初的孵化期之后，观察到大致恒定的晶粒成核速率和生长速度。从结晶的早期阶段外推可以估算最终的平均晶粒尺寸。在相同的退火条件下，PECVD材料的成核速率比HWCVD材料低得多，而晶粒生长速度却相当，从而导致PECVD材料的晶粒尺寸显着增大。与HWCVD材料相比，PECVD材料的X射线衍射线宽度更宽。衍射线的展宽主要取决于晶粒内的缺陷结构，而不是晶粒尺寸。低温预退火减小了HWCVD材料的最终XRD线宽，表明对缺陷结构或密度的影响。观察到HWCVD材料结晶期间的晶格收缩与初始氢含量无关。

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