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Preparation and characterization of amorphous SiO_2 nanowires

机译：非晶SiO_2纳米线的制备与表征

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摘要

Amorphous SiO_2 nanowires were prepared by heating Si powder and Au-coated Si(111) substrates for different times. The SiO_2 nanowires were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The results show that large amounts of amorphous SiO_2 nanowires with a diameter of about 40 nm were formed on the entire surface of the substrates. Au particles were observed at the tip of the SiO_2 nanowires, which is consistent with the well-known vapor-liquid-solid (VLS) process. It is found that the annealing time affects the morphology of the products. Finally, the growth mechanism of the SiO_2 nanowires was discussed.
机译：通过加热硅粉和镀金的Si（111）衬底不同时间来制备非晶SiO_2纳米线。通过扫描电子显微镜（SEM），透射电子显微镜（TEM）和X射线光电子能谱（XPS）对SiO_2纳米线进行了表征。结果表明，在基板的整个表面上形成了大量直径约40nm的非晶SiO_2纳米线。在SiO_2纳米线的尖端观察到金颗粒，这与众所周知的气液固（VLS）工艺一致。发现退火时间影响产物的形态。最后讨论了SiO_2纳米线的生长机理。

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  • 来源
    《Materials Science and Engineering》 |2010年第1期|P.15-17|共3页
  • 作者

    Boshi Zhuo; Yuguo Li; Xiaokai Zhang; Aichun Yang;

  • 作者单位

    Semiconductor Institute, College of Physics and Electronics, Shandong Normal University, 88 East Wenhua Road, Jinan 250014, PR China;

    rnSemiconductor Institute, College of Physics and Electronics, Shandong Normal University, 88 East Wenhua Road, Jinan 250014, PR China;

    rnSemiconductor Institute, College of Physics and Electronics, Shandong Normal University, 88 East Wenhua Road, Jinan 250014, PR China;

    rnSemiconductor Institute, College of Physics and Electronics, Shandong Normal University, 88 East Wenhua Road, Jinan 250014, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    SiO_2; nanowires; annealing; amorphous;

    机译：SiO_2;纳米线;退火;无定形的;

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