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Effect of processing on microstructure of Si:Mn

机译：加工工艺对Si：Mn组织的影响

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摘要

Effect of processing of Si:Mn at up to 1270 K (HT) under enhanced hydrostatic pressure (HP, up to 1.1 GPa) for 1 h on its microstructure has been investigated by X-ray and SIMS methods. Si:Mn was prepared by implantation at 610K of Mn~+ ions (dose 1 × 10~(16)cm~(-2), energy 160 keV) into (001) oriented Czochralski (Cz-Si) or Floating zone (Fz-Si) silicon with interstitial oxygen concentration, c_o = 1.5 × 10~(17) cm~(-3) (Fz-Si) or 9 × 10~(17) cm~(-3) (Cz-Si). The defect structure of Si: Mn depends on c_o, HT and HP. The intensity of X-ray diffraction peaks originating from the ferromagnetic Mn_4Si_7 phase (with the lattice parameters a = 0.5525 nm and c= 1.7463 nm) increases with HT, up to 1070 K. Markedly shifted Mn atom concentration towards the surface is observed after processing of Si:Mn at >1000K, especially under 105 Pa. Processing at 1270K results in the decreased content of Mn_4Si_7; Mn diffusivity decreases with HP. Oxygen gettering within the implantation-disturbed area has been stated.
机译：通过X射线和SIMS方法研究了在增加的静水压力（HP，高达1.1 GPa）下，在高达1270 K（HT）的条件下处理Si：Mn的微观结构的影响。通过在610K下将Mn〜+离子（剂量1×10〜（16）cm〜（-2），能量160 keV）注入到（001）取向的直拉斯基（Cz-Si）或浮动区（Fz -Si）具有间隙氧浓度的硅，c_o = 1.5×10〜（17）cm〜（-3）（Fz-Si）或9×10〜（17）cm〜（-3）（Cz-Si）。 Si：Mn的缺陷结构取决于c_o，HT和HP。源于铁磁性Mn_4Si_7相（晶格参数a = 0.5525 nm和c = 1.7463 nm）的X射线衍射峰的强度随HT的增加而增加，直至1070K。加工后观察到Mn原子浓度明显向表面移动在> 1000K时，尤其是在105 Pa下，Si：Mn的含量降低。在1270K下加工会导致Mn_4Si_7含量降低；锰扩散率随HP降低。已经陈述了在注入扰动区域内的氧气吸收。

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  • 来源
    《Materials Science and Engineering》 |2009年第2009期|99-102|共4页
  • 作者

    J. Bak-Misiuk; A. Misiuk; P. Romanowski; A. Barcz; R.Jakiela; E. Dynowska; J.Z. Domagala; W. Caliebe;

  • 作者单位

    Institute of Physics, PAS, SLI. 3, Al. Lotnikow 32/46, PL-02668 Warsaw, Poland;

    Institute of Electron Technology, Al. Lotnikow 46, PL-02668 Warsaw, Poland;

    Institute of Physics, PAS, SLI. 3, Al. Lotnikow 32/46, PL-02668 Warsaw, Poland;

    Institute of Physics, PAS, SLI. 3, Al. Lotnikow 32/46, PL-02668 Warsaw, Poland Institute of Electron Technology, Al. Lotnikow 46, PL-02668 Warsaw, Poland;

    Institute of Physics, PAS, SLI. 3, Al. Lotnikow 32/46, PL-02668 Warsaw, Poland;

    Institute of Physics, PAS, SLI. 3, Al. Lotnikow 32/46, PL-02668 Warsaw, Poland;

    Institute of Physics, PAS, SLI. 3, Al. Lotnikow 32/46, PL-02668 Warsaw, Poland;

    HASYLAB at DESY, Notkerstr. 85, D-22603 Hamburg, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Si; Mn; interstitial oxygen; implantation; high pressure; annealing; spintronics;

    机译：锰;间隙氧植入高压力;退火;自旋电子学;

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