Study on the time decay of excess carriers in solar silicon

K. Lauer; A. Laades; H. UEbensee; A. Lawerenz

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Study on the time decay of excess carriers in solar silicon

机译：太阳能硅中过量载流子的时间衰减研究

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An understanding of the measured excess carrier decay in solar silicon is needed for a meaningful characterization of the material quality by this method. This paper studies the time decay of excess carriers after laser pulse excitation in solar silicon. For this material, which exhibits a high density of different defects, a simplified approach to solve the diffusion equation of the excess carriers can be taken. We calculate the time decay of the excess carriers numerically by using an appropriate model of the bulk minority carrier lifetime. These calculations are subsequently compared to experimental data, which are obtained by measuring the photoconductance decay using reflected microwaves in surface passi-vated solar silicon wafers. A very good agreement between theoretical and experimental results gives the base for further evaluation of interstitial iron and minority carrier traps using the excess carrier decay.

机译：为了通过这种方法对材料质量进行有意义的表征，需要了解所测得的太阳能硅中多余的载流子衰减。本文研究了太阳能硅中激光脉冲激发后多余载流子的时间衰减。对于这种表现出高密度的不同缺陷的材料，可以采用简化的方法来求解过量载流子的扩散方程。我们通过使用适当的散装少数载流子寿命模型来计算过量载流子的时间衰减。随后将这些计算结果与实验数据进行比较，该实验数据是通过使用表面钝化的太阳能硅晶片中的反射微波测量光导衰减而获得的。理论和实验结果之间的良好一致性为使用多余的载流子衰减进一步评估间隙铁和少数载流子阱提供了基础。

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来源
《Materials Science and Engineering》 |2009年第2009期|202-205|共4页
作者
K. Lauer; A. Laades; H. UEbensee; A. Lawerenz;
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作者单位

CiS Institut fuer Mikrosensorik GmbH, SolarZentrum Erfurt, Konrad-Zuse-Str. 14. 99099 Erfurt, Germany TU Ilmenau. Institut fuer Physik. Weimarer Str. 32, 98693 Ilmenau. Germany;

CiS Institut fuer Mikrosensorik GmbH, SolarZentrum Erfurt, Konrad-Zuse-Str. 14. 99099 Erfurt, Germany;

CiS Institut fuer Mikrosensorik GmbH, SolarZentrum Erfurt, Konrad-Zuse-Str. 14. 99099 Erfurt, Germany;

CiS Institut fuer Mikrosensorik GmbH, SolarZentrum Erfurt, Konrad-Zuse-Str. 14. 99099 Erfurt, Germany;

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原文格式 PDF
正文语种 eng
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关键词
silicon; photoconductivity;

机译：硅;光电导;

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3. Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers [J] . Ren Shengdong, Li Bincheng, Huang Qiuping Journal of Applied Physics . 2013,第24期

机译：三维瞬态模型用于时域自由载流子吸收测量硅片中多余载流子
4. ROUND-ROBIN OF EXCESS CHARGE CARRIER LIFETIME AND DECAY TIME MEASUREMENTS ON SILICON BLOCKS AND ADJACENT SURFACE PASSIVATED WAFERS [C] . K. Lauer, S. Walter, A. Sidelnicov, European Photovoltaic Solar Energy Conference and Exhibition . 2011

机译：硅块和邻近表面钝化晶片上超额电荷载体寿命和衰减时间的轮循
5. Improving front surface charge carrier collection in thin-film silicon solar cells on glass through characterisation and advanced numerical simulation. [D] . Cangming, Ke. 2015

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8. EXPERIMENTAL INVESTIGATION OF THE EXCESS CHARGE AND TIME CONSTANT OF MINORITY CARRIERS IN THE THIN DIFFUSED LAYER OF 0.1 OHM-CM SILICON SOLAR CELLS [R] . M. P. Godlewski, Henry W. Brandhorst, F. A. Lindholm 1976

机译：0.1 OHm-Cm硅太阳电池薄层中少数载流子过剩电荷和时间常数的实验研究

Study on the time decay of excess carriers in solar silicon

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