Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO_4

著录项

• 来源
  《Materials Science and Engineering》 |2009年第3期|66-70|共5页
• 作者

  Takayoshi Katase; Kenji Nomura; Hiromichi Ohta; Hiroshi Yanagi; Toshio Kamiya; Masahiro Hirano; Hideo Hosono;

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• 作者单位

  Materials and Structures Laboratory, Tokyo Institute of Technology. 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;

  ERATO-SORST, JST. in Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;

  ERATO-SORST, JST. in Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan Graduate School of Engineering, Nagoya University, Furo, Chikusa-ku, Nagoya 464-8603, Japan;

  Materials and Structures Laboratory, Tokyo Institute of Technology. 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;

  Materials and Structures Laboratory, Tokyo Institute of Technology. 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan ERATO-SORST, JST. in Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;

  ERATO-SORST, JST. in Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;

  Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan ERATO-SORST, JST. in Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  gallium nitride; epitaxial growth; lattice-matched buffer layer; homologous series compound; reactive-solid phase epitaxy (R-SPE); molecular beam epitaxy (MBE);

  机译：氮化镓外延生长晶格匹配的缓冲层;同源系列化合物反应固相外延（R-SPE）;分子束外延（MBE）;