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机译:在GaN基LED的p-GaN层上制造蛾眼结构以改善光提取
Department of Materials Science and Engineering, Korea University, 5-1 Anam-Dong, Sungbuk-Ku, Seoul 136-701, South Korea;
Department of Materials Science and Engineering, Korea University, 5-1 Anam-Dong, Sungbuk-Ku, Seoul 136-701, South Korea;
Department of Materials Science and Engineering, Korea University, 5-1 Anam-Dong, Sungbuk-Ku, Seoul 136-701, South Korea;
Department of Materials Science and Engineering, Korea University, 5-1 Anam-Dong, Sungbuk-Ku, Seoul 136-701, South Korea;
Department of Materials Science and Engineering, Korea University, 5-1 Anam-Dong, Sungbuk-Ku, Seoul 136-701, South Korea;
Korea Institute of Nuclear Safety, 19 Gusung-dong. Yusung-ku, Daejeon 305-338 South Korea;
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro, Buk-gu, Gwangju 500-712, South Korea;
moth-eye structure; GaN; photon extraction efficiency; green LED; photoluminescence; nanoimprint lithography;
机译:蛾眼图案化蓝宝石衬底上基于GaN的LED垂直光提取的改进
机译:在p-GaN表面上制造纳米圆锥阵列,以提高基于GaN的可调波长LED的光提取效率
机译:具有纳米粗糙化的p-GaN表面的基于InGaN / GaN的发光二极管的光提取效率的提高
机译:GaN基LED上亚微米结构的制造光提取增强
机译:GaN基发光二极管上的光学功能结构,用于提高光提取效率和控制发射模式。
机译:使用微米和纳米复合聚合物结构提高GaN基LED的光子提取效率
机译:由飞秒激光引起的微/纳米结构,增强了基于GaN的LED的光提取