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首页> 外文期刊>Materials Science and Engineering >Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction
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Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction

机译:在GaN基LED的p-GaN层上制造蛾眼结构以改善光提取

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摘要

Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure.
机译:为了提高GaN基绿色发光二极管(LED)的光提取效率,通过UV压印和电感耦合等离子体(ICP)蚀刻工艺在p-GaN顶部覆层上生产了蛾眼结构。通过控制Cr掩模层的厚度和ICP蚀刻时间来调节蛾眼结构的高度和形状。与没有蛾眼结构的相同LED样品以及具有蛾眼结构的LED样品的InGaN多量子阱层相比,具有蛾眼结构的LED器件堆叠的透射率提高了1.5-2.5倍其结构比没有蛾眼结构的LED样品高5-7倍。

著录项

  • 来源
    《Materials Science and Engineering》 |2009年第3期|170-173|共4页
  • 作者单位

    Department of Materials Science and Engineering, Korea University, 5-1 Anam-Dong, Sungbuk-Ku, Seoul 136-701, South Korea;

    Department of Materials Science and Engineering, Korea University, 5-1 Anam-Dong, Sungbuk-Ku, Seoul 136-701, South Korea;

    Department of Materials Science and Engineering, Korea University, 5-1 Anam-Dong, Sungbuk-Ku, Seoul 136-701, South Korea;

    Department of Materials Science and Engineering, Korea University, 5-1 Anam-Dong, Sungbuk-Ku, Seoul 136-701, South Korea;

    Department of Materials Science and Engineering, Korea University, 5-1 Anam-Dong, Sungbuk-Ku, Seoul 136-701, South Korea;

    Korea Institute of Nuclear Safety, 19 Gusung-dong. Yusung-ku, Daejeon 305-338 South Korea;

    Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-Gwagiro, Buk-gu, Gwangju 500-712, South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    moth-eye structure; GaN; photon extraction efficiency; green LED; photoluminescence; nanoimprint lithography;

    机译:蛾眼结构氮化镓;光子提取效率;绿色LED;光致发光纳米压印光刻;

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