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首页> 外文期刊>Materials Science and Engineering >Electrodeposition of wide band gap InGa_xS_yO_z thin films for solar cell applications
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Electrodeposition of wide band gap InGa_xS_yO_z thin films for solar cell applications

机译：用于太阳能电池的宽带隙InGa_xS_yO_z薄膜的电沉积

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摘要

Indium-Gallium-sulfide-oxide thin films were deposited onto F-doped SnO_2-coated glass by electrochemical deposition from an aqueous bath. The films were deposited at three different ratios of gallium to indium in the precursor bath; namely [Ga/In] = 2/8, 5/5 and 8/2.The impact of the gallium content on the composition, optical transmission, structure, photosensitivity, electrical resistivity and morphology of the deposited films was investigated. The films deposited at [Ga/In] = 5/5 and 8/2 had an energy gap as high as 3.5 eV. The X-ray diffraction spectrum of the film deposited at [Ga/In]=2/8 contained weak peaks of indium metal, but the In peaks were absent in the spectra of the films deposited at [Ga/In]= 5/5 and 8/2. The photosensitivity of the film was observed by means of photoelectrochemical measurements, which confirmed that all the films showed n-type conduction. Finally, the film has been used as a buffer layer to fabricate a SnS-based thin film solar cell.
机译：通过从水浴中进行电化学沉积，将铟镓硫氧化物薄膜沉积到掺F的SnO_2涂层玻璃上。在前驱液中以三种不同的镓/铟比例沉积薄膜。即，[Ga / In] ＝ 2 / 8、5 / 5和8/2。研究了镓含量对沉积膜的组成，光学透射率，结构，光敏性，电阻率和形态的影响。以[Ga / In] = 5/5和8/2沉积的薄膜的能隙高达3.5 eV。以[Ga / In] = 2/8沉积的膜的X射线衍射光谱包含铟的弱峰，但以[Ga / In] = 5/5沉积的膜的光谱中没有In峰。和8/2。通过光电化学测量观察膜的光敏性，这证实了所有膜都显示出n型导电性。最后，该膜已被用作缓冲层，以制造基于SnS的薄膜太阳能电池。

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