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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Optical gain at 1.53 μm in Er~(3+)-Yb~(3+) co-doped porous silicon waveguides
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Optical gain at 1.53 μm in Er~(3+)-Yb~(3+) co-doped porous silicon waveguides

机译:Er〜(3 +)-Yb〜(3+)共掺杂多孔硅波导中1.53μm处的光学增益

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摘要

Erbium-ytterbium (Er-Yb)-co-doped porous silicon planar waveguides were prepared from P~+-type (100) oriented silicon wafer. Erbium and ytterbium ions were electrochemically introduced into the porous structure of the waveguide core. The doping profiles of erbium and ytterbium ions were determined by EDX analysis performed on sample cross-section. The mean concentration in the guiding layer is of about 1 × 10~(20) cm~(-3). The refractive indices were measured from co-doped porous silicon and undoped waveguides after the thermal treatments. The photoluminescence (PL) peak of optically activated erbium ions at 1.53 μm was recorded. The PL enhancement is the result of the energy transfer from the excited state of Yb to the state of Er. Optical losses at 1.55 μm were measured on these waveguides and were of about 2 dB/cm. An internal gain at 1.53 μm of 5.8 dB/cm has been measured with a pump power of 65 mW at 980 nm.
机译:由P〜+型(100)取向的硅片制备掺-掺Er-Yb的多孔硅平面波导。 and和离子被电化学引入波导芯的多孔结构中。通过对样品横截面进行的EDX分析来确定of和and离子的掺杂分布。引导层中的平均浓度约为1×10〜(20)cm〜(-3)。在热处理之后,从共掺杂的多孔硅和未掺杂的波导中测量折射率。记录光学激活的离子在1.53μm处的光致发光(PL)峰。 PL增强是能量从Yb激发态转移到Er态的结果。在这些波导上测得的光损耗为1.55μm,约为2 dB / cm。在980 nm下使用65 mW的泵浦功率测量了1.53μm的内部增益为5.8 dB / cm。

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