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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Enhancement of high-temperature deformation in fine-grained silicon carbide with Al doping
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Enhancement of high-temperature deformation in fine-grained silicon carbide with Al doping

机译：Al掺杂增强细晶碳化硅的高温变形

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摘要

Fine-grained SiC was hot-pressed with Al, B, and C additives under 150 MPa at 1850 ℃. The grains had an equiaxed shape and the average grain size was 360 nm in as-sintered SiC. Al was detected at grain boundaries of Al, B, C-doped SiC by using energy-dispersive X-ray spectroscopy. The uni-axial compression tests were performed at constant crosshead speed at 1772 ℃ in He. The strain rates of Al, B, C-doped SiC in the low-stress region were ～ 1 order of magnitude faster than those of B, C-doped SiC. The stress exponent of Al, B, C-doped SiC was 1.4 in the higher stress region, and increased to 2.6 with decreasing stress. The transition of the stress exponent, which is often observed in the superplasticity of metals and oxides, e.g., ZrO_2, appeared in fine-grained SiC also.
机译：在1850℃，150 MPa下，用Al，B和C添加剂对细晶SiC进行热压。晶粒具有等轴形状，并且在烧结的SiC中平均晶粒尺寸为360nm。通过使用能量色散X射线光谱法在Al，B，C掺杂的SiC的晶界处检测到Al。在He于1772℃的恒定十字头速度下进行了单轴压缩试验。低应力区的Al，B，C掺杂SiC的应变速率比B，C掺杂SiC的应变速率快约1个数量级。 Al，B，C掺杂的SiC的应力指数在较高应力区域为1.4，随着应力降低而增加至2.6。应力指数的转变（通常在金属和氧化物（例如ZrO_2）的超塑性中观察到）也出现在细晶粒SiC中。

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