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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Post-growth annealing treatment effects on properties of Na-doped CuInS_2 thin films
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Post-growth annealing treatment effects on properties of Na-doped CuInS_2 thin films

机译：生长后退火处理对Na掺杂CuInS_2薄膜性能的影响

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摘要

Structural and optical properties of Na-doped CuInS_2 thin films grown by double source thermal evaporation method were studied. The films were annealed from 250 to 500 ℃ in a vacuum after evaporation. X-ray diffraction pattern indicated that there are traces of Cu and In_6S_7, which disappeared on annealing above 350 ℃. Good quality CuInS_2:Na 0.3% films were obtained on annealing at 500 ℃. Furthermore, we found that the absorption coefficient of Na-doped CuInS_2 thin films reached 1.5 × 10~5 cm~(-1). The change in band gap of the doped samples annealed in the temperatures from 250 to 500 ℃ was in the range 0.038-0.105 eV.
机译：研究了双源热蒸发法制备的Na掺杂CuInS_2薄膜的结构和光学性质。蒸发后，将膜在真空中从250℃退火至500℃。 X射线衍射图谱表明，有痕量的Cu和In_6S_7，在350℃以上退火时消失。在500℃下退火可获得质量优良的CuInS_2：Na 0.3％薄膜。此外，我们发现Na掺杂的CuInS_2薄膜的吸收系数达到1.5×10〜5cm〜（-1）。在250至500℃温度下退火的掺杂样品的带隙变化在0.038-0.105 eV范围内。

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