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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Rectifying behavior and magnetic tunability in heterojunctions composed of p-La_(0.9)Ba_(0.1)MnO_3-Si
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Rectifying behavior and magnetic tunability in heterojunctions composed of p-La_(0.9)Ba_(0.1)MnO_3-Si

机译：由p-La_（0.9）Ba_（0.1）MnO_3 / n-Si组成的异质结的整流行为和磁可调性

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摘要

Heteroepitaxial p-n junctions are formed by growing a p-La_(0.9)Ba_(0.1)MnO_3 (LOMB) layer on a n-Si substrate using conventional pulsed laser deposition. To avoid the rapid oxidation of silicon surface, an ultrathin SrTiO_3 buffer layer is inserted between LBMO and Si. Such p-LBMO-Si heterojunctions present good rectifying characteristic in wide temperature range from 10 to 310 K. The asymmetric transport behavior is found being strong when the temperature decreases, which is understandable considering the change of band gap in LBMO films. As a typical feature of the CMR manganites is the strong dependence of their properties on magnetic fields, the magnetic response of these heterojunctions was studied. It is found that the applied magnetic field bend the I-V curves and reduce the diffusion voltage significantly. Also, a negative magnetoresistance appears in the field, demonstrating the magnetic tenability for these manganite heterojunctions.
机译：通过使用常规脉冲激光沉积在n-Si衬底上生长p-La_（0.9）Ba_（0.1）MnO_3（LOMB）层来形成异质外延p-n结。为了避免硅表面的快速氧化，在LBMO和Si之间插入了一个超薄的SrTiO_3缓冲层。这种p-LBMO / n-Si异质结在10至310 K的宽温度范围内均表现出良好的整流特性。当温度降低时，发现不对称的传输行为很强，考虑到LBMO薄膜中带隙的变化，这是可以理解的。由于CMR锰矿的典型特征是其性能对磁场的强烈依赖性，因此研究了这些异质结的磁响应。发现所施加的磁场使I-V曲线弯曲并且显着降低了扩散电压。而且，磁场中出现了负磁阻，表明了这些锰矿异质结的磁性。

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