• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >La_(0.7)Sr_(0.3)MnO_3 thin films on Bi_4Ti_3O_(12)/CeO_2/yttria-stabilised-zirconia buffered Si(001) substrates: Electrical, magnetic and 1/f noise properties
【24h】

La_(0.7)Sr_(0.3)MnO_3 thin films on Bi_4Ti_3O_(12)/CeO_2/yttria-stabilised-zirconia buffered Si(001) substrates: Electrical, magnetic and 1/f noise properties

机译：Bi_4Ti_3O_（12）/ CeO_2 /氧化钇稳定的氧化锆缓冲的Si（001）衬底上的La_（0.7）Sr_（0.3）MnO_3薄膜：电，磁和1 / f噪声特性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The remarkable electronic and magnetic properties of manganites have raised lot of interests for applications. Together with room temperature operation, depositing epitaxial films onto Si substrates is one of the main concerns for their future breakthrough. This paper presents the structural, magnetic and electrical properties of La_(0.7)Sr_(0.3)MnO_3 (LSMO) thin films deposited on Bi_4Ti_3O_(12) (BTO)/CeO_2/yttria-stabilised-zirconia (YSZ) buffered Si(001) substrates. A comprehensive X-ray diffraction study was performed in order to investigate the epitaxial quality. The temperature of maximum resistance and the Curie temperature was 390 and 350 K, respectively, for the 50 nm thick films. Preliminary low frequency noise measurements were performed. The normalized Hooge parameter was in the range 10~(-27) to 10~(-28) m~3, which make these films already competitive for uncooled bolometer applications, even if the noise is about one or two orders of magnitude higher than what we typically measured in the best LSMO films deposited on (001) SrTiO_3 substrates. LSMO films deposited on BTO/CeO_2/YSZ buffered silicon substrates were of overall good quality and suitable for use in device fabrication.
机译：锰的卓越的电子和磁性特性引起了许多应用的兴趣。与室温操作一起，将外延膜沉积到Si衬底上是其未来突破的主要关注之一。本文介绍了在Bi_4Ti_3O_（12）（BTO）/ CeO_2 /氧化钇稳定氧化锆（YSZ）缓冲Si（001）上沉积的La_（0.7）Sr_（0.3）MnO_3（LSMO）薄膜的结构，磁性和电学性质基材。为了研究外延质量，进行了全面的X射线衍射研究。对于50nm厚的膜，最大电阻温度和居里温度分别为390K和350K。初步进行了低频噪声测量。归一化的Hooge参数在10〜（-27）到10〜（-28）m〜3的范围内，这使得这些薄膜对于非冷却辐射热计应用已经具有竞争力，即使噪声比高约1或2个数量级。我们通常在沉积在（001）SrTiO_3基板上的最佳LSMO膜中进行的测量。沉积在BTO / CeO_2 / YSZ缓冲硅基板上的LSMO膜总体质量良好，适合用于器件制造。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号