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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Effects of buffer layer on the dielectric properties of BaTiO_3 thin films prepared by sol-gel processing
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Effects of buffer layer on the dielectric properties of BaTiO_3 thin films prepared by sol-gel processing

机译：缓冲层对溶胶-凝胶法制备BaTiO_3薄膜介电性能的影响

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摘要

Ferroelectric BaTiO_3 (BT) thin films were deposited on Pt/Ti/SiO_2/Si substrates by sol-gel technique. The thickness of the La_(0.5)Sr_(0.5)CoO_3 (LSCO), serving as a buffer layer, was varied from 0 nm to 210 nm, to study the dependence of dielectric properties of the BT thin films on the buffer layer thickness and stress. The influence of buffer layer thickness on the phase and microstructure of the thin films was also examined. Dielectric properties of the thin films were investigated as a function of temperature and direct current (dc) electric field. The results showed that the LSCO buffer layer strongly influenced the microstructure and the dielectric properties of the films. The BT thin film with 150 nm thickness LSCO buffer layer had the least loss, smallest leakage current and largest dielectric constant.
机译：利用溶胶-凝胶技术在Pt / Ti / SiO_2 / Si衬底上沉积了BaTiO_3铁电薄膜。用作缓冲层的La_（0.5）Sr_（0.5）CoO_3（LSCO）的厚度从0 nm更改为210 nm，以研究BT薄膜的介电特性对缓冲层厚度和强调。还检查了缓冲层厚度对薄膜的相和微结构的影响。研究了薄膜的介电性能随温度和直流（dc）电场的变化。结果表明，LSCO缓冲层对薄膜的微观结构和介电性能有很大影响。厚度为150 nm的LSCO缓冲层的BT薄膜具有最小的损耗，最小的漏电流和最大的介电常数。

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