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机译:Pb_(1-x)La_x(Zr_(0.56)Ti_(0.44))_(1-x / 4)O_3陶瓷的微观结构演变和电性能
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China;
Pb_(1-x)La_x(Zr_(0.56)Ti_(0.44))_(1-x/4)O_3; microstructure evolutions; electrical properties; morphotropic phase boundary (MPB);
机译:高度(100)的(Pb_(1-x)La_x)Ti_(1-x / 4)O_3 / Pb(Zr_(0.20)Ti_(0.80))O_3 /(Pb_(1-x)La_x)Ti_(1 -x / 4)O_3射频磁控溅射多层薄膜
机译:镧掺杂对(Pb_(1-x)La_x)(Zr_(0.70)Ti_(0.30))O_3陶瓷的电和机电性能的影响
机译:通过射频磁控溅射制备的高度(100)取向的Pb(Zr_(0.20)Ti_(0.80))O_3 /(Pb_(1-x)La_x)Ti_(1-x / 4)O_3多层薄膜
机译:生长温度调制的相位演化和高质量PB_(1-X)LA_X的功能特性(Zr_(0.9)Ti_(0.1))O_3薄膜
机译:镧镍氧化物电极上MOCVD衍生的钙钛矿铅锆(x)钛(1-x)氧(3)和铅(scan钽)(1-x)钛(x)氧(3)薄膜的微观结构和电性能缓冲硅
机译:(ZrO2)1-x(Sc2O3)x(CeO2)y和(ZrO2)1-x-y-z(Sc2O3)x(CeO2)y(Y2O3)z固溶体晶体的物理和电学性质数据
机译:依赖于成分的极化转换行为 (111) - 优选的多晶pb(Zr_ {x} Ti_ {1-x})O_ {3}薄膜
机译:有机金属气相外延al / sub X / Ga / sub 1-X / as和al / sub X / Ga / 1-X / as / Gaas的电学和光学性质的研究。进展报告,1982年12月1日至1983年11月