...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy
【24h】

Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy

机译：低温分子束外延生长TlGaAs / GaAs量子阱结构的限制

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

TlGaAs/GaAs multiple-quantum-well (MQW) structures were grown on GaAs substrates at a substrate temperature of 190℃ by molecular-beam epitaxy. The MQW structures were intended to consist of four identical TlGaAs wells, each of which is sandwiched by GaAs barrier layers. X-ray diffraction was used to investigate the limits to Tl content and thickness of the TlGaAs well layer for forming the MQW structures. Successful growth of TlGaAs/GaAs MQW structures having nominal Tl contents of 6, 8, and 9% was confirmed for the three different well thicknesses of about 15, 10, and 5 nm, respectively, while further increase in Tl content resulted in failure in forming MQW structures. The bounds for forming the MQW structures are discussed in terms of the epitaxial thickness of TlGaAs. The effect of the MQW structures on retarding the formation of Tl droplets is pointed out.
机译：通过分子束外延，在190℃的衬底温度下，在GaAs衬底上生长TlGaAs / GaAs多量子阱（MQW）结构。 MQW结构旨在由四个相同的TlGaAs阱组成，每个阱都夹在GaAs势垒层之间。 X射线衍射被用于研究用于形成MQW结构的TlGaAs阱层的T1含量和厚度的极限。分别针对约15、10和5 nm的三种不同的阱厚度，证实了标称T1含量分别为6％，8％和9％的TlGaAs / GaAs MQW结构的成功生长，而Tl含量的进一步增加导致硅的失效。形成MQW结构。根据TlGaAs的外延厚度讨论了形成MQW结构的界限。指出了MQW结构对延迟T1液滴形成的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号