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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Field emission enhancement of carbon nitride films by annealing with different durations
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Field emission enhancement of carbon nitride films by annealing with different durations

机译：通过不同持续时间的退火增强氮化碳膜的场发射

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摘要

Magnetron sputtered carbon nitride films (CN_x) were annealed at 750℃ for periods from 30 to 120 min. Effects of annealing with different durations on the field emission of CN_x films were investigated and related to the variations of chemical bonding and surface morphology induced by annealing. The results show that annealing effectively enhances field emission ability of the CN_x films and that the threshold field was lowered from 13 to 5 V/μm. The measurements of Fourier transform infrared spectroscopy (FTTR), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) indicated that annealing leads to a loss of N content and to formation of more graphite-like sp~2 C clusters in the films, and simultaneously the film surface becomes rougher after annealing, all of which is attributed to the increased film field emission. A large number of sp~2 C clusters with good conductivity enables tunneling in the film, making electron emission easier, and moreover, a rougher surface also improves the field enhancement factor of the films. However, continuing to increase annealing time eventually lowers the field emission of the films.
机译：磁控溅射氮化碳膜（CN_x）在750℃退火30至120分钟。研究了不同退火时间对CN_x薄膜场发射的影响，并与退火引起的化学键变化和表面形貌有关。结果表明，退火有效地增强了CN_x薄膜的场发射能力，并且阈值场从13 V /μm降低到5 V /μm。傅里叶变换红外光谱（FTTR），X射线光电子能谱（XPS）和原子力显微镜（AFM）的测量结果表明，退火会导致N含量的损失并形成更多的石墨状sp〜2 C团簇。薄膜，同时退火后薄膜表面变得更粗糙，这全部归因于薄膜场发射的增加。大量具有良好电导率的sp〜2 C团簇能够在薄膜中隧穿，使电子发射更加容易，此外，更粗糙的表面还可以改善薄膜的场增强因子。然而，继续增加退火时间最终降低了膜的场发射。

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