Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

Keun-Yong Ban; Hyun-Gi Hong; Do-Young Noh; Jung Inn Sohn; Dae-Joon Kang; Tae-Yeon Seong

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Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

机译：Ir / Ag反射器，用于基于GaN的高性能近紫外发光二极管

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We report on the formation of reflective and low resistance Ag-based contacts to p-GaN using Ir interlayers for GaN-based near UV flip-chip light emitting diodes (FCLEDs). The as-deposited Ir/Ag contacts give non-linear current-voltage (Ⅰ-Ⅴ) behaviors. However, the contacts become ohmic with specific contact resistance of ～10~(-4) Ω cm~2 when annealed at temperatures 330-530℃ for 1 min in air. The 530℃-annealed Ir/Ag contacts give a reflectance of ～75% at a wavelength of 405 nm, which is somewhat higher than that (～71%) of annealed single Ag contacts. It is also shown that the output power of the LEDs made with the annealed Ir/Ag contact is higher than that with the annealed single Ag contact.

机译：我们报道了使用Ir中间层形成基于GaN的近紫外倒装芯片发光二极管（FCLED）的p-GaN的反射和低电阻基于Ag的触点。沉积的Ir / Ag触点具有非线性电流-电压（Ⅰ-Ⅴ）行为。然而，在空气中于330-530℃下退火1分钟后，该接触点变为欧姆，比电阻为〜10〜（-4）Ωcm〜2。 530℃退火的Ir / Ag触点在405 nm波长下的反射率为〜75％，比退火的单个Ag触点的反射率（〜71％）要高一些。还显示出，经退火的Ir / Ag触点制成的LED的输出功率高于经退火的单个Ag触点制成的LED的输出功率。

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来源
《Materials Science and Engineering. B, Solid-State Materials for Advanced Technology》 |2006年第3期|p.26-29|共4页
作者
Keun-Yong Ban; Hyun-Gi Hong; Do-Young Noh; Jung Inn Sohn; Dae-Joon Kang; Tae-Yeon Seong;
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作者单位

Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea;

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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
ohmic contact; GaN; LED; Ag reflector;

机译：欧姆接触;GaN;LED;银反射器;

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6. Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes [O] . Shengjun Zhou, Haohao Xu, Mengling Liu, 2018

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7. Publisher’s Note: “Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes” Appl. Phys. Lett. 101, 021115 (2012) [O] . Joon-Woo Jeon, Woong-Sun Yum, Semi Oh, 2012

机译：出版商注：“纳米结构Ag点，用于提高GaN的发光二极管的AG反射器的热稳定性”Appl。物理。吧。 101,021115（2012）

Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

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