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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Amorphous layer depth dependence on implant parameters during Si self-implantation
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Amorphous layer depth dependence on implant parameters during Si self-implantation

机译:硅自注入过程中非晶层深度对注入参数的依赖性

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Preamorphization followed by low temperature solid phase epitaxial regrowth has been proved to provide a high activation of the dopants with minimal diffusion. However, the end of range damage present after regrowth beyond the initial amorphous/crystalline interface causes diffusion and deactivation of dopants during subsequent annealing. In this paper, we study the influence of implant conditions on the depth of the amorphous layer during Si self-implantation. We compare experimental data with our simulation results obtained using an atomistic amorphization-recrystallization model recently developed. We show that the amorphous/crystalline interface depth initially increases with dose but saturates at high doses. Beam current and wafer temperature also alter the depth of the amorphous layer and the amount of residual damage by affecting the dynamic annealing of the damage. These parameters are not always well controlled or specified in experiments and can explain differences observed in dopant profiles.
机译:已经证明,先进行非晶化然后再进行低温固相外延再生,可以以最小的扩散提供对掺杂物的高活化。然而,在再生之后超出初始非晶/晶体界面而出现的射程结束损伤会导致掺杂剂在随后的退火过程中扩散和失活。在本文中,我们研究了硅自注入过程中注入条件对非晶层深度的影响。我们将实验数据与使用最近开发的原子化非晶化-再结晶模型获得的模拟结果进行比较。我们表明,非晶/晶体界面深度最初随剂量增加,但在高剂量时饱和。束电流和晶片温度还通过影响损伤的动态退火而改变非晶层的深度和残余损伤的量。这些参数并非总是在实验中得到很好的控制或指定,并且可以解释在掺杂剂分布图中观察到的差异。

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