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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantation
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Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantation

机译：氧化对通过低能离子注入获得的硅纳米晶体嵌入层的纳米MOS电容器传输特性的影响

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摘要

In this paper, we have studied the effect of annealing under slightly oxidizing ambient (N_2 + O_2) on the structural and electrical characteristics of a limited number of silicon nanoparticles embedded in an ultra-thin SiO_2 layer. These nanoparticles were synthesized by ultra-low energy (1 keV) ion implantation and annealing. Material characterization techniques including transmission electron microscopy (TEM), Fresnel imaging and spatially resolved electron energy loss spectroscopy (EELS) have been used to evaluate the effects of oxidation on structural characteristics of nanocrystal layer. Electrical transport characteristics have been measured on less than one hundred nanoparticles by exploiting a nanoscale MOS capacitor as aprobe. Top electrode of this nanoscale capacitor (100 nm x 100 nm) was patterned over the samples by electron-beam nanolithography. Room temperature Ⅰ-Ⅴ characteristics of these structures exhibit discrete current peaks, which have been interpreted by quantized charging of the nanoparticles and electrostatic interaction between the trapped charges and the tunneling current. The effects of progressive oxidation on these current features has been studied and discussed.
机译：在本文中，我们研究了在略微氧化的环境（N_2 + O_2）下退火对有限数量的嵌入超薄SiO_2层中的硅纳米颗粒的结构和电学特性的影响。这些纳米粒子是通过超低能量（1 keV）离子注入和退火合成的。材料表征技术包括透射电子显微镜（TEM），菲涅耳成像和空间分辨电子能量损失谱（EELS）已用于评估氧化对纳米晶体层结构特征的影响。通过使用纳米级MOS电容器作为探针，已经测量了不到一百个纳米粒子的电传输特性。通过电子束纳米光刻在样品上对该纳米级电容器（100 nm x 100 nm）的上电极进行构图。这些结构的室温Ⅰ-Ⅴ特性表现出离散的电流峰值，这可以通过纳米粒子的定量充电以及捕获的电荷与隧穿电流之间的静电相互作用来解释。已经研究和讨论了逐步氧化对这些电流特征的影响。

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