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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Leakage current and deep levels in CoSi2 silicided junctions
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Leakage current and deep levels in CoSi2 silicided junctions

机译：CoSi2硅化结中的泄漏电流和深能级

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摘要

In this work the leakage current of junctions with a self-aligned cobalt silicide is studied. It is shown that junctions with a self-aligned CoSi_2 layer show a leakage current excess which is strongly reduced by increasing the PAI energy. This indicates that the observed leakage current excess is related to the CoSi_2 formation conditions. The mechanism responsible for the leakage of CoSi_2 junctions is investigated by current versus temperature measurements and by deep level transient spectroscopy. In addition, the role of the mechanical stress is investigated by comparing different isolation structures and by numerical stress calculations. It is concluded that the shallow trench isolation (STI) induced stress and the cobalt silicide formation concur to produce a junction leakage current increase by creating a deep level in silicon located close to midgap. This level can possibly identified with a level ascribed to a point defect excess.
机译：在这项工作中，研究了具有自对准硅化钴的结的泄漏电流。结果表明，具有自对准CoSi_2层的结显示出泄漏电流过量，该泄漏电流可通过增加PAI能量而大大降低。这表明观察到的泄漏电流过量与CoSi_2的形成条件有关。通过电流对温度的测量以及深能级瞬态光谱研究了负责CoSi_2结泄漏的机理。此外，通过比较不同的隔离结构并通过数值应力计算来研究机械应力的作用。结论是，浅沟槽隔离（STI）引起的应力和硅化钴的形成会通过在接近中间能隙的硅中产生一个深能级而导致结漏电流增加。可以用归因于点缺陷过多的水平来识别该水平。

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