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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Ion-implant simulations: The effect of defect spatial correlation on damage accumulation
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Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

机译：离子注入模拟：缺陷空间相关性对损伤累积的影响

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摘要

A predictive damage accumulation model, which takes into account different interdependent implant parameters, has been developed. The model assumes that the recrystallization rate of damage structures known as amorphous pockets (AP) is a function of its effective size, regardless of their spatial configuration. In the model, APs are three-dimensional agglomerates of interstitials (Ⅰ) and vacancies (Ⅴ), whose initial coordinates are generated by a binary collision approximation (BCA) code. This work addresses the importance of the spatial correlation of Ⅰ's and Ⅴ's in modeling damage accumulation and amorphization, by comparing simulations, whereby the initial coordinates of Ⅰ and Ⅴ are generated by BCA or randomly generated from the concentration distribution of an input damage profile. Low temperature implantations were simulated to avoid dynamic annealing in order to compare the initial damage morphology. For the same damage level, simulations by BCA resulted in ion mass dependent APs' sizes, with lighter implant ions generating smaller APs' sizes, implying more dilute damage compared with heavier ions. However, the ion mass dependent APs' size effect was lost by loading the same damage profile and randomly positioning the Ⅰ's and Ⅴ's. Consequently, the damage morphology, as well as the annealing behaviour obtained by reading Ⅰ, Ⅴ damage profiles is substantially different from those obtained using the much more realistic cascades generated by BCA.
机译：已经开发了一种预测性损伤累积模型，该模型考虑了不同的相互依赖的植入物参数。该模型假设损坏结构的重结晶速率（称为无定形袋（AP））是其有效尺寸的函数，而与它们的空间配置无关。在模型中，AP是填隙（Ⅰ）和空位（Ⅴ）的三维聚集体，其初始坐标是通过二进制碰撞近似（BCA）代码生成的。这项工作通过比较模拟来解决Ⅰ和Ⅴ的空间相关性在建模损伤累积和非晶化中的重要性，其中Ⅰ和Ⅴ的初始坐标是由BCA生成的或从输入损伤轮廓的浓度分布中随机生成的。模拟低温注入以避免动态退火，以便比较初始损伤形态。对于相同的损伤水平，BCA的模拟得出了取决于离子质量的AP尺寸，较轻的注入离子产生的AP尺寸较小，这意味着与较重的离子相比，稀释损伤更大。但是，通过加载相同的损伤曲线并随机放置Ⅰ和Ⅴ，失去了离子质量依赖性AP的尺寸效应。因此，通过读取Ⅰ，Ⅴ损伤曲线得到的损伤形态和退火行为与使用BCA产生的更为真实的级联获得的损伤形态和退火行为有很大不同。

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