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Boron interaction with extended defects induced by He-H co-implantation in Si

机译：硼与Si中He-H共注入引起的扩展缺陷的相互作用

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摘要

Helium and hydrogen implantations lead to the formation of extended defects that strongly interact with impurities like metal and dopants, affecting significantly their final profiles. Even if the efficiency of this metal gettering technique is widely demonstrated in literature, the high dose requirement can be a drawback for industrial applications. Dose reduction becomes then crucial. In the smartcut~® process, it has been shown that helium and hydrogen co-implantation leads to the expected dose decrease. The same idea was then applied for the gettering technique, keeping co-implantation doses below exfoliation threshold. After evidencing the impact of the H addition on cavities, this paper will focus on boron interactions with He-H induced defects. For this purpose, uniformly high doped (10~(18) B cm~(-3)) P-type < 111 > wafers were used. He implantation at 40 keV for a dose of 5 or 1 x 10~(16) He~+ cm~(-2) followed or not by H implantation at 36 keV for different doses were carried out. Samples were subsequently furnace annealed for 1 h at temperatures ranging from 500 to 900℃. Transmission electron microscopy (TEM) observations allow us to monitor the defect evolution. Secondary ion mass spectrometry (SIMS) was used to follow the boron and hydrogen profiles while the spreading resistance profiling (SRP) gives the activation dependence with the implantation and the annealing temperature. This work enlightens the large impact of H on cavity growth and clarifies the interaction of B with extended defects in presence or absence of hydrogen.
机译：氦和氢的注入会导致形成扩展的缺陷，这些缺陷会与金属和掺杂剂等杂质强烈相互作用，从而严重影响其最终轮廓。即使该金属吸杂技术的效率在文献中得到了广泛证明，但高剂量要求仍可能是工业应用的一个缺点。减少剂量就变得至关重要。在smartcut〜®工艺中，已证明氦和氢的共注入会导致预期的剂量减少。然后将相同的想法应用于吸气技术，使共植入剂量保持在剥落阈值以下。在证明了H的添加对型腔的影响后，本文将重点讨论硼与He-H引起的缺陷的相互作用。为此，使用了均匀高掺杂的（10〜（18）B cm〜（-3））P型<111>晶片。在40 keV下注入5或1 x 10〜（16）He〜+ cm〜（-2）剂量的He，然后在不同剂量下以36 keV注入H。随后将样品在500至900℃的温度下进行炉退火1 h。透射电子显微镜（TEM）的观察使我们能够监测缺陷的演变。二次离子质谱（SIMS）用于跟踪硼和氢的分布，而扩展电阻分布图（SRP）给出了随注入和退火温度的活化依赖性。这项工作启发了H对空穴生长的巨大影响，并阐明了B在存在或不存在氢的情况下与扩展缺陷之间的相互作用。

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