• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Boron diffusion in strained and strain-relaxed SiGe
【24h】

Boron diffusion in strained and strain-relaxed SiGe

机译：应变和松弛SiGe中的硼扩散

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

SiGe has been utilized for aggressive CMOS technologies development recently and there are many references [M. Shima, T. Ueno, T. Kumise, H. Shido, Y. Sakuma, S. Nakamura, Symposium on VLSI Technology Technical Digest, 2002, pp. 94-95; T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, M. Bohr, International Electron Devices Meeting Technical Digest, December 2003, pp. 978-980; P. Bai, C. Auth, S. Balakrishnan, M. Bost, R. Brain, V. Chikarmane, R. Heussner, M. Hussein, J. Hwang, D. Ingerly, R. James, J. Jeong, C. Kenyon, E. Lee, S. Lee, N. Lindert, M. Liu, Z. Ma, T. Marieb, A. Murthy, R. Nagisetty, S. Natarajan, J. Neirynck, A. Ott, C. Parker, J. Sebastian, R. Shaheed, S. Sivakumar, J. Steigerwald, S. Tyagi, C. Weber, B. Woolery, A. Yeoh, K. Zhang, M. Bohr, International Electron Devices Meeting Technical Digest, December 2004, pp. 657-660] presenting the advantages brought by it. A better understanding regarding the boron diffusion behavior within and in the vicinity of SiGe is necessary to optimize the extension and the source/drain in pMOSFET. In order to achieve the goal, both effects from mechanical strain and Ge doping on boron diffusion have been investigated. However, only a few publications discuss the impacts of both. Furthermore, most researches investigate these two effects under the conditions of low boron concentration [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl. Phys. 94 (September (6)) (2003) 3883-3890] and high thermal budget anneal [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl. Phys. 94 (September (6)) (2003) 3883-3890; S. Eguchi, C.N. Chleirigh, O.O. Olubuyide, J.L. Hoyt, Appl. Phys. Lett. 84 (January (3)) (2004) 368-370] in which the equilibrium state of point defects is achieved. These are not the conditions used in aggressive CMOS technologies. Our experiment has therefore been designed to investigate boron diffusion in both strained and strain-relaxed SiGe including ultra-low energy, high concentration boron implant and spike RTA. Models are proposed and the retardation factors corresponding to Ge concentration and stress effect were successfully extracted through these experiments. This paper describes these experiments, with the calibration and the resulting diffusion constants for an ultra-shallow boron junction in SiGe that is popular in advanced CMOS technology.
机译：SiGe最近被用于积极的CMOS技术开发，并且有很多参考文献[M. Shima，T. Ueno，T. Kumise，H.Shido，Y.Sakuma，S.Nakamura，VLSI Technology Technical Digestion，2002，pp.94-95; T. Ghani，M.Armstrong，C.Auth，M.Bost，P.Charvat，G.Glass，T.Hoffmann，K.Johnson，C.Kenyon，J.Klaus，B.McIntyre，K.Mistry，A。 Murthy，J.Sandford，M.Silberstein，S.Sivakumar，P.Smith，K.Zawadzki，S.Thompson，M.Bohr，《国际电子设备会议技术摘要》，2003年12月，第978-980页； P. Bai，C. Auth，S. Balakrishnan，M.Bost，R.Brain，V.Chikarmane，R.Heussner，M.Hussein，J.Hwang，D.Ingerly，R.James，J.Jeong，C. Kenyon，E。Lee，S。Lee，N.Lindert，M.Liu，Z.Ma，T.Marieb，A.Murthy，R.Nagisetty，S.Nataarajan，J.Neirynck，A.Ott，C.Parker， J. Sebastian，R.Shaheed，S.Sivakumar，J.Steigerwald，S.Tyagi，C.Weber，B.Woolery，A.Yoh，K.Zhang，M.Bohr，《国际电子设备技术摘要会议》，2004年12月， pp。657-660]展示了它带来的优势。必须对SiGe内部和附近的硼扩散行为有一个更好的了解，以优化pMOSFET的扩展和源极/漏极。为了达到该目的，已经研究了机械应变和Ge掺杂对硼扩散的影响。但是，只有少数出版物讨论了两者的影响。此外，大多数研究都在低硼浓度条件下研究了这两种作用[P。 Kuo，J.L. Hoyt，J.F. Gibbons，J.E. Turner，D.Lefforge，Appl。物理来吧66（January（5））（1995）580-582; N.R. Zangenberg，J. Fage-Pedersen，J.Lundsgaard Hansen，A.Nylandsted Larsen，J.Appl。物理94（9月（6））（2003）3883-3890]和高热预算退火[P. Kuo，J.L. Hoyt，J.F. Gibbons，J.E. Turner，D.Lefforge，Appl。物理来吧66（January（5））（1995）580-582; N.R. Zangenberg，J. Fage-Pedersen，J.Lundsgaard Hansen，A.Nylandsted Larsen，J.Appl。物理94（9月（6））（2003）3883-3890; S.Eguchi，C.N. Chleirigh，O.O。 Olubuyide，J.L。Hoyt，应用物理来吧84（1月（3）（2004）368-370]中达到点缺陷的平衡状态。这些不是积极的CMOS技术中使用的条件。因此，我们的实验旨在研究应变和松弛SiGe中的硼扩散，包括超低能量，高浓度硼注入和尖峰RTA。提出了模型，并通过实验成功提取了与锗浓度和应力效应相对应的延迟因子。本文介绍了这些实验，以及在先进CMOS技术中流行的SiGe中超浅硼结的校准以及所得的扩散常数。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号