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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >B implanted at room temperature in crystalline Si: B defect formation and dissolution
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B implanted at room temperature in crystalline Si: B defect formation and dissolution

机译：在室温下将B注入晶体Si中：B缺陷的形成和溶解

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The B lattice location of B implanted into crystalline Si at room temperature has been investigated using the nuclear reaction ~(11)B(p,α)~8Be induced by 650 keV proton beam and channelling analyses. The angular scans along the < 100 > and < 110 > axes indicate the formation of a particular B complex with B atoms non-randomly located. The same defect has been observed also for B doped Si where the B atoms, initially substitutional and electrically active, have been displaced as consequence of the interaction with the point defects generated by proton irradiation. The angular scans were compatible with the B-B pairs aligned along the < 100 > axis predicted by theoretical calculations. The thermal evolution in the 400-950℃ range of the B complexes has been inferred both by B lattice location measurements and electrical activation. At low temperature ( < 700℃) only 10% of the total B dose is active and a significant increase of randomly located B occurs. A significant electrical activation consistent with the concentration of substitutional B occurs at temperature higher than 800℃. The data are interpreted in terms of a formation and dissolution of the B complexes.
机译：利用650 keV质子束引起的核反应〜（11）B（p，α）〜8Be和沟道分析研究了室温下注入晶体Si中B的B晶格位置。沿<100>和<110>轴进行的角扫描表明形成了特定B配合物，其中B原子位于非随机位置。对于B掺杂的Si也观察到相同的缺陷，其中B原子最初是取代的且具有电活性，由于与质子辐照产生的点缺陷的相互作用而被置换。角扫描与通过理论计算预测的沿<100>轴对齐的B-B对兼容。通过B晶格位置测量和电激活可以推断B配合物在400-950℃范围内的热演化。在低温（<700℃）下，只有总B剂量的10％有效，并且随机分布的B显着增加。在高于800℃的温度下会发生与取代B浓度一致的显着电活化。数据以B络合物的形成和溶解来解释。

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