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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Analytic model for ion channeling in successive implantations in crystalline silicon
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Analytic model for ion channeling in successive implantations in crystalline silicon

机译：晶体硅连续注入中离子通道的解析模型

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摘要

Successive ion implantations are frequently used in the fabrication of silicon devices. Each ion implantation increases the crystal damage in the region near the surface. For successive implantations, the ion channeling in perfect crystal channels is reduced and the channeling tail is lowered. In the process simulation, the impurity distribution after ion implantation is often calculated as the sum of two Pearson functions, of which the second covers the channeling ions. In this work, we present a general model for the reduction of channeling in successive implantations. The crystal damage from the implantations is monitored and used for the calculation of a differential channel dose. The model allows a fast analytic calculation of impurity profiles in 1D, 2D, and 3D process simulators. It provides a similar accuracy as Monte Carlo simulations and gives excellent agreement with SIMS data of successive ion implantations.
机译：连续离子注入经常用于硅器件的制造中。每次离子注入都会增加表面附近区域的晶体损伤。对于连续注入，减少了理想晶体通道中的离子通道，降低了通道尾部。在过程仿真中，通常将离子注入后的杂质分布计算为两个Pearson函数之和，其中第二个Pearson函数覆盖了通道离子。在这项工作中，我们提出了减少连续植入中通道减少的通用模型。监视来自注入的晶体损伤，并将其用于差分通道剂量的计算。该模型允许在1D，2D和3D过程模拟器中快速分析杂质分布。它提供与蒙特卡洛模拟相似的精度，并且与连续离子注入的SIMS数据非常吻合。

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