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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Solid-phase epitaxial regrowth of a shallow amorphised Si layer studied by X-ray and medium energy ion scattering
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Solid-phase epitaxial regrowth of a shallow amorphised Si layer studied by X-ray and medium energy ion scattering

机译：用X射线和中能离子散射研究浅非晶硅层的固相外延生长

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Solid-phase epitaxial regrowth (SPER) of Si amorphised by ion implantation is considered as a potential solution for the fabrication of ultra-shallow junctions for future technology nodes of Si CMOS devices. In the present work, a series of Epi-Si samples amorphised by ultra-low energy As implantation was investigated by monitoring the lattice recovery during SPER and the simultaneous evolution of implantation-induced defects using the combined capabilities of X-ray scattering methods and medium energy ion scattering. Annealing temperatures between 550 and 700℃ and times from 10 to 200 s were chosen to characterise different stages of the SPER as well as the onset of defect annealing. Small defect clusters were detected in the end-of-range damage region of the implanted samples and layer-by-layer regrowth of the amorphised region was clearly observed. The complementary nature of the information obtained by the two methods is demonstrated. This study confirms that the high dose As implant causes the slowing down of the SPER rate in Si.
机译：通过离子注入非晶化的Si的固相外延再生长（SPER）被认为是为Si CMOS器件的未来技术节点制造超浅结的潜在解决方案。在目前的工作中，通过监测SPER期间的晶格恢复以及使用X射线散射方法和介质的综合能力来监测注入引起的缺陷的同时演变，研究了一系列被超低能量As注入非晶化的Epi-Si样品。能量离子散射。选择550至700℃的退火温度和10至200 s的时间来表征SPER的不同阶段以及缺陷退火的发生。在植入样品的范围末端损坏区域中检测到小的缺陷簇，并且清晰地观察到非晶区域的逐层再生长。证明了通过两种方法获得的信息的互补性质。这项研究证实高剂量的As注入会导致Si中SPER速率的降低。

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