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Optical and structural study of Ge/Si quantum dots on Si(100) surface covered with a thin silicon oxide layer

机译:覆盖有薄氧化硅层的Si(100)表面上的Ge / Si量子点的光学和结构研究

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摘要

The formation of Ge quantum dots (QDs) grown on an ultrathin interlayer of SiO_2 on top of a Si(100) substrate was investigated, as a function of the thicknesses of the SiO_2 interlayer (0.5, 0.75 or 1 monolayer (ML)) and the Ge layer (0.3, 0.6 or 0.9 nm). The structural characterization was performed by Rutherford backscattering spectroscopy (RBS). Photoluminescence (PL) studies were done to characterize the optical behavior of all samples. Hydrogen treatment was performed in order to passivate non-radiative recombination channels, thus enhancing the PL intensity. The results suggest the formation of Ge nanoislands (quantum dots, QDs), for the sample with 1 ML of SiO_2 and 0.9 nm of Ge, and exclude their formation for samples with lower SiO_2 and Ge layer thicknesses. We also observe an influence of the SiO_2 interlayer thickness in the QDs formation.
机译:研究了在Si(100)衬底顶部的SiO_2超薄中间层上生长的Ge量子点(QDs)的形成与SiO_2中间层(0.5、0.75或1个单层(ML))的厚度的关系,以及Ge层(0.3、0.6或0.9nm)。通过Rutherford背散射光谱(RBS)进行结构表征。进行光致发光(PL)研究以表征所有样品的光学行为。进行氢处理以钝化非辐射重组通道,从而增强PL强度。结果表明,对于具有1 ML SiO_2和0.9 nm Ge的样品,形成了Ge纳米岛(量子点,QD),而对于具有较低SiO_2和Ge层厚度的样品,则没有形成它们。我们还观察到了QDs形成过程中SiO_2中间层厚度的影响。

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