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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Molecular dynamics characterization of as-implanted damage in silicon
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Molecular dynamics characterization of as-implanted damage in silicon

机译：硅中植入损伤的分子动力学表征

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摘要

We have analyzed the as-implanted damage produced in silicon by B, Si and Ge ions using molecular dynamics (MD) simulations. Implantations were carried out at 50 K to avoid damage migration and annealing. In order to make a statistical study of the damage features, we have simulated hundreds of independent cascades for each ion for the same nuclear deposited energy. We have obtained that the average number of displaced atoms (DA) from perfect lattice positions and the size of defect clusters formed increases with ion mass. This dependence has not been obtained from equivalent binary collisions simulations. This indicates that multiple interactions play an important role in the generation of damage. Amorphous regions are directly formed during the collisional phase of the cascade of Ge and Si ions.
机译：我们已经使用分子动力学（MD）模拟分析了B，Si和Ge离子在硅中产生的植入损伤。植入在50 K下进行，以避免损伤迁移和退火。为了对损伤特征进行统计研究，我们针对相同的核沉积能为每个离子模拟了数百个独立的级联。我们已经获得了理想晶格位置的平均位移原子数（DA）和形成的缺陷簇的尺寸随离子质量的增加而增加。这种依赖关系尚未从等效的二进制碰撞仿真中获得。这表明多种相互作用在损害的产生中起重要作用。在Ge和Si离子级联的碰撞阶段直接形成非晶区。

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