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Influence of irradiation on the switching behavior in PZT thin films

机译：辐照对PZT薄膜开关行为的影响

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Spatially nonuniform imprint behavior induced by X-ray synchrotron, electron and neutron irradiation has been investigated in sol-gel Pb(Zr,Ti)O_3 thin films. The analysis of the switching current data reveals the strong influence of irradiation on the switching current shape. The obtained effects have been explained as a result of acceleration of the bulk screening process induced by irradiation. It was shown that the spatial distribution of the internal bias field is determined by the domain structure existing during irradiation. The changes in the structural characteristics during fatigue cycling have been reveled by high resolution synchrotron X-ray diffraction experiments on (111)-oriented PZT-based capacitors with a composition in the morphotropic region. From both ex situ and in situ measurements, microstructural changes with cyclic switching during fatigue have been evidenced and correlated with the evolution of the switching characteristics.
机译：在溶胶-凝胶Pb（Zr，Ti）O_3薄膜中研究了由X射线同步加速器，电子和中子辐照引起的空间不均匀压印行为。开关电流数据的分析揭示了辐照对开关电流形状的强烈影响。由于辐射引起的大量筛选过程的加速，已经解释了所获得的效果。结果表明，内部偏置场的空间分布由辐照过程中存在的畴结构决定。高分辨率同步加速器X射线衍射实验揭示了在（111）取向变质区中基于PZT的电容器的高分辨率同步加速器X射线衍射实验揭示了疲劳循环过程中结构特征的变化。从异位和原位测量，已经证明了疲劳期间循环切换的微观结构变化，并且与切换特性的演变相关。

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