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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Adhesion study of low-k/Si system using 4-point bending and nanoscratch test
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Adhesion study of low-k/Si system using 4-point bending and nanoscratch test

机译：低k / Si体系的附着力的四点弯曲和纳米划痕试验

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Chemical vapour deposited (CVD) low-k films using tri-methyl-silane (3MS) and tetra-methy cyclo-tetra-siloxanes (TMCTS) precursors were studied. A 4-point bend test (4PBT) was performed to assess the adhesion property of the low-k films to Si substrates and the results were compared with that of simpler method, nanoscratch test (NST), as a quality control tool despite its drawbacks. Adhesion energy, G_c, of the low-k/Si interface as measured by 4PBT and critical scratch load, P_c, as obtained by NST display a linear relationship with hardness and modulus of the low-k film. The lowering of G_c as the hardness of the film decreases can be explained by the effects of the C introduction into the Si―O networks found in these films. Lower carbon content for higher hardness films is thought to cause them to be more "silica-like", and thus, exhibit better adhesion with the Si substrate. Two failure modes were observed for specimens under 4PBT. On one hand, films with low hardness (<5 GPa) exhibit low G_c (<10 J/m~2) with an adhesive separation of low-k from the Si substrate. On the other hand, films of high hardness (>5 GPa) display interfacial energies in excess of 10 J/m~2 with delamination of epoxy from the Si substrate, thus, indicating excellent adhesion between the low-k films and Si substrate. For the low hardness films, good correlation exists between P_c and G_c. However, the two data points of the high hardness films that gave the two highest P_c and G_c values do not lie on the correlation line drawn for the low hardness film data points due to different factors governing the failure in both tests and a change in the 4PBT failure mechanism.
机译：研究了使用三甲基硅烷（3MS）和四甲基环四硅氧烷（TMCTS）前体的化学气相沉积（CVD）低k膜。进行了4点弯曲试验（4PBT）来评估低k膜对Si衬底的粘附性能，并将结果与​​较简单的方法-纳米划痕试验（NST）进行了比较，尽管它有缺点，但它还是一种质量控制工具。通过4PBT测量的低k / Si界面的粘合力G_c和通过NST获得的临界刮擦载荷P_c与低k膜的硬度和模量呈线性关系。随着膜硬度的降低，G_c的降低可以通过将碳引入到在这些膜中发现的Si-O网络中的影响来解释。较高硬度的膜的较低碳含量被认为使它们更像“二氧化硅”，因此表现出与Si衬底更好的粘合性。对于4PBT下的样品，观察到两种破坏模式。一方面，具有低硬度（<5 GPa）的膜表现出低的G_c（<10 J / m〜2），并且低k与Si衬底发生胶粘剂分离。另一方面，高硬度（> 5 GPa）的膜显示出超过10 J / m〜2的界面能，并且环氧树脂从Si基板上分层，因此表明低k膜与Si基板之间具有出色的附着力。对于低硬度膜，P_c和G_c之间存在良好的相关性。但是，由于在两个测试中控制失效的因素不同，并且在两个测试中的变化也不同，因此给出两个最高P_c和G_c值的高硬度膜的两个数据点并不位于为低硬度膜数据点绘制的相关线上。 4PBT失败机制。

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