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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition
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Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition

机译：金属有机化学气相沉积法生长InP / InGaAlAs和InAlAs / InGaAlAs分布式布拉格反射器的比较

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摘要

Long wavelength vertical cavity surface emitting lasers (VCSELs) are considered the best candidates for the low cost reliable light emitters in fiber communications. The low refractive index contrast in the conventional InP-based lattice-matched distributed Bragg reflectors (DBRs), InP/InGaAsP, impeded the development of 1.3-1.5 μm VCSELs. However, the monolithic InP-based lattice-matched DBRs are still most attractive and desirable. The InP/InGaAlAs and InAlAs/InGaAlAs DBRs with larger refractive index contrast than the conventional InP/InGaAsP DBRs have been demonstrated recently. In this report, we compare these two material systems in terms of optical and electrical properties of DBRs. We found the InP/InGaAlAs DBRs have better electrical and optical properties, while the InAlAs/InGaAlAs DBRs have much lower growth complexity.
机译：长波长垂直腔表面发射激光器（VCSEL）被认为是光纤通信中低成本可靠的发光器的最佳选择。常规的基于InP的晶格匹配的分布式布拉格反射器（DBR）InP / InGaAsP的低折射率对比度阻碍了1.3-1.5μmVCSEL的发展。但是，基于InP的单片晶格匹配DBR仍然是最有吸引力和最需要的。近来已经证明了具有比常规InP / InGaAsP DBR更大的折射率对比的InP / InGaAlAs和InAlAs / InGaAlAs DBR。在本报告中，我们就DBR的光学和电气特性比较了这两种材料系统。我们发现InP / InGaAlAs DBR具有更好的电学和光学特性，而InAlAs / InGaAlAs DBR具有低得多的生长复杂度。

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