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Relevance of the 3D to 2D growth mode transition for the transport properties of nanometric SrRuO_3 films

机译:3D到2D生长模式过渡与纳米SrRuO_3薄膜的传输特性的相关性

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摘要

Epitaxial SrRuO_3 nanometric films were grown on SrTiO_3(001) substrates by pulsed laser deposition. The films, at the early growth stages develop a pattern of one dimensional structures following the substrate steps along [100] direction and formed by three-dimensional (3D) islands. At a thickness of about 10 nm, these structures merge together, and thereafter the growth proceeds essentially by two-dimensional (2D) growth mode and the films become progressively smoother. This unusual 3D to 2D growth mode transition is responsible of an inhomogeneous microstructure, which has a strong impact on the electronic transport properties of the films. At the regions where the elongated structures merge together, structural disorder develops leading to a well oriented pattern of defective regions. On one hand, this results in the emergence of an in-plane resistivity anisotropy due to the different electronic properties of the island-merging boundaries. On the other hand, the microstructural disorder provokes a shortening of the electronic mean free path. As a result of this, the conductivity at low temperature becomes somewhat suppressed. These findings could be of relevance for technological applications of SrRuO_3, and specifically for the electronic transport properties across magnetic tunnel junctions.
机译:通过脉冲激光沉积在SrTiO_3(001)衬底上生长外延SrRuO_3纳米薄膜。在基板的早期生长阶段,这些薄膜沿衬底步骤沿[100]方向形成一维结构的图案,并由三维(3D)岛形成。这些结构以约10 nm的厚度合并在一起,然后基本上以二维(2D)生长模式进行生长,并且薄膜逐渐变得更光滑。这种不寻常的3D到2D生长模式转换是导致微观结构不均匀的原因,微观结构对薄膜的电子传输性能有很大影响。在细长结构融合在一起的区域,结构混乱发展,导致缺陷区域的取向良好。一方面,由于岛合并边界的不同电子特性,导致面内电阻率各向异性的出现。另一方面,微结构紊乱引起电子平均自由程的缩短。结果,低温下的电导率变得有些被抑制。这些发现可能与SrRuO_3的技术应用有关,特别是与跨磁性隧道结的电子传输特性有关。

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