Structural and electrical properties of sol-gel deposited Pb(Zr_(0.92)Ti_(0.08))O_3 thin films doped with Nb

L. Pintilie; I. Boerasu; M. Pereira

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Structural and electrical properties of sol-gel deposited Pb(Zr_(0.92)Ti_(0.08))O_3 thin films doped with Nb

机译：掺Nb的溶胶-凝胶沉积Pb（Zr_（0.92）Ti_（0.08））O_3薄膜的结构和电学性质

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Pb(Zr, Ti)O_3 (PZT) thin films with Zr/Ti ratio of 92/8 and doped with up to 4 at. percent Nb were deposited by sol-gel on Pt coated Si substrates. The scope was to investigate the influence of Nb additive on the structural, optical and electrical properties of Zr-rich PZT phase. It was found that a residual pyrochlore phase stabilizes with increasing the Nb content. The remnant polarization, the coercive field, and the dielectric losses increase with increasing Nb content. The presence of the pyroelectric effect was also evidenced on as-deposited layers. The films have potential for light detection in the infrared region of the electromagnetic spectrum (pyroelectric effect).

机译：Zr / Ti比为92/8的Pb（Zr，Ti）O_3（PZT）薄膜掺杂了4 at。通过溶胶-凝胶法在Pt涂层的Si衬底上沉积了5％的Nb。范围是研究Nb添加剂对富Zr PZT相的结构，光学和电学性质的影响。发现残留的烧绿石相随着Nb含量的增加而稳定。剩余极化，矫顽场和介电损耗随Nb含量的增加而增加。在沉积的层上也证实了热电效应的存在。该膜具有在电磁光谱的红外区域（热电效应）中进行光检测的潜力。

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《Materials Science and Engineering. B, Solid-State Materials for Advanced Technology》 |2004年第3期|p.174-177|共4页
作者
L. Pintilie; I. Boerasu; M. Pereira;
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作者单位

Department of Physics, University do Minho, Campus de Gualtar, 4710-057 Braga, Portugal;

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正文语种 eng
中图分类工程材料学;
关键词
Ferroelectrics; Thin films; PZT; Sol-gel (film deposition; thin films);

机译：铁电体;薄膜;PZT;溶胶凝胶（薄膜沉积;薄膜）;

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1. Properties of Pb(Zr_(0.92)Ti_(0.08))O_3 thin films deposited by sol-gel [J] . L. Pintilie, I. Boerasu, M.J.M. Gomes, Thin Solid Films . 2004,第1a2期

机译：溶胶-凝胶沉积Pb（Zr_（0.92）Ti_（0.08））O_3薄膜的性能
2. Electrical Properties of Pb_(0.92)La_(0.08)Zr_(0.52)Ti_(0.48)O_3 Thin Films Grown on SrRuO_3 Buffered Nickel and Silicon Substrates by Chemical Solution Deposition [J] . Manoj Narayanan, Beihai Ma, Sheng Tong, International journal of applied ceramic technology . 2012,第1期

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4. Strain-enhanced Dielectric and Ferroelectric Properties of Pb(Zr_(0.8)Ti_(0.2))O_3/Pb(Zr_(0.2)Ti_(0.8))O_3 Multilayer Thin Films Without Buffer Layers [C] . H. Liu, X. Gong, J. Liang Materials Science Technology Conference and Exhibition . 2007

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Structural and electrical properties of sol-gel deposited Pb(Zr_(0.92)Ti_(0.08))O_3 thin films doped with Nb

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