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Growth of titanium dioxide thin films via a metallurgical route and characterizations for chemical gas sensors

机译:二氧化钛薄膜的冶金生长及化学气体传感器的表征

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Polycrystalline Al-doped rutile TiO_2 were grown on quartz substrates by a novel metallurgical route and characterized by X-ray diffraction, and scanning electron microscopy and transmission electron microscopy. The role of Al is to generate non-stoichiometry and oxygen vacancies to make the rutile TiO_2 matrix more conducting. Ti/(TiO_2:Al) junctions were found to give linear current-voltage (I-V) characteristics after annealing at 400 deg C for 30 min, showing good ohmic behaviour. Palladium Schottky contacts were fabricated on (TiO_2:Al) and characterized by I-V measurements. The effect of operating temperature on junction parameters was studied. The sensor response of Pd/(TiO_2:Al) junction was studied at 400 deg C in presence of H_2 gas with varying concentrations from 500 to 2000 ppm. The sensitivity, response time and reversibility were investigated from the transient response characteristics of the sensor at 400 deg C. The sensitivity was found to be a function of applied bias across the junction.
机译:通过新颖的冶金方法在石英衬底上生长了多晶掺杂铝的金红石型TiO_2,并通过X射线衍射,扫描电子显微镜和透射电子显微镜对其进行了表征。 Al的作用是产生非化学计量比和氧空位,以使金红石型TiO_2基体更具导电性。发现Ti /(TiO_2:Al)结在400℃退火30分钟后具有线性电流-电压(I-V)特性,表现出良好的欧姆特性。在(TiO_2:Al)上制造了钯肖特基触头,并通过I-V测量对其进行了表征。研究了工作温度对结参数的影响。在存在浓度为500至2000 ppm的H_2气体的情况下,在400摄氏度下研究了Pd /(TiO_2:Al)结的传感器响应。从传感器在400摄氏度下的瞬态响应特性研究了灵敏度,响应时间和可逆性。发现灵敏度是跨结施加的偏置的函数。

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