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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Charge-carrier transport and photogeneration processes in pyronine (G) (PYR) sensitized-TiO_2 photovoltaic device
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Charge-carrier transport and photogeneration processes in pyronine (G) (PYR) sensitized-TiO_2 photovoltaic device

机译：吡咯（G）（PYR）敏化的TiO_2光电器件中的载流子传输和光生过程

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摘要

Steady-state current-voltage characteristics in dark and under illumination, along with impedance characteristics at different biasing voltages, were investigated on solid film of pyronine (PYR) sensitized-TiO_2, sandwiched between ITO and Al electrodes. The J-V characteristics of the material in dark were explained by the formation of percolation network of nano particles between the electrodes. The device ITO/TiO_2-PYR/Al device shows rectification below 2.5 V and becomes symmetrical at higher voltages. Dark current increases by two orders, which indicates that charge-carrier transport occurs not only in the organic phase, but also involves processes in nano particles. The impedance characteristics (variation of imaginary impedance with real impedance) at different biasing voltages show two semicircles at voltage below 2.5 V, and beyond which only one semicircle was observed. This also indicates that at low voltages the device exhibits rectification, and above 2.5 V, both the interfaces behave as Ohmic contact. This observation is also confirmed from impedance spectroscopy. The photoaction spectra of the device-based-composite containing PYR-sensitized-TiO_2 is different from the photoaction spectra of the device employing pure PRY. The charge collection efficiencies for the PYR-TiO_2 composite increases under both forward bias and reverse bias. This indicates that the same process governs photocurrent multiplication for both bias directions.
机译：研究了夹在ITO和Al电极之间的吡咯（PYR）敏化TiO_2固体膜上在黑暗和光照下的稳态电流-电压特性，以及在不同偏压下的阻抗特性。通过在电极之间形成纳米粒子的渗滤网络，可以解释材料在黑暗中的J-V特性。 ITO / TiO_2-PYR / Al器件在2.5 V以下显示整流，并在较高电压下变得对称。暗电流增加了两个数量级，这表明电荷载流子传输不仅发生在有机相中，而且还涉及纳米粒子中的过程。在不同的偏置电压下的阻抗特性（虚阻抗随实际阻抗的变化）在电压低于2.5 V时显示出两个半圆，超过此值仅观察到一个半圆。这也表明，在低电压下，该器件表现出整流作用，并且在2.5 V以上时，两个接口均表现为欧姆接触。阻抗谱也证实了这一观察。含有PYR敏化的TiO_2的器件基复合材料的光敏光谱不同于采用纯PRY的器件的光敏光谱。在正向偏压和反向偏压下，PYR-TiO_2复合材料的电荷收集效率都会提高。这表明相同的过程控制两个偏置方向的光电流倍增。

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