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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Characterisation of ultra-thin Ⅲ/Ⅴ-heterostructures by convergent-beam-electron- and high-resolution-X-ray-diffraction
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Characterisation of ultra-thin Ⅲ/Ⅴ-heterostructures by convergent-beam-electron- and high-resolution-X-ray-diffraction

机译：会聚束电子和高分辨率X射线衍射表征III /Ⅴ超薄异质结构

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摘要

Scanning transmission electron microscopy (STEM) (Z-contrast imaging and convergent beam electron diffraction, CBED) is applied to characterise Ⅲ/Ⅴ epitaxial heterostructures consisting of InGaAs-, InAlAs- and InP-compound layers grown by metal-organic vapour phase epitaxy (MOVPE) in a non-gaseous source configuration. The results concerning layer-widths, compositional changes and build-in strains are compared to those obtained by high resolution-X-ray diffraction. When the electron beam is positioned at an interface or at ultra-fine layers, the convergent beam electron diffraction pattern become depended on the conditions of the focussing electron lens(es). These conditions are in particular the focus-setting and the spherical aberration. Both can be measured by fitting a "simple" geometrical pattern to the experimental one. By taking these consideration into account a CBED-strain-measurement is shown with a high spatial resolution of 0.8 nm.
机译：应用扫描透射电子显微镜（STEM）（Z射线成像和会聚束电子衍射，CBED）表征由有机金属气相外延生长的由InGaAs-，InAlAs-和InP-化合物层组成的Ⅲ/Ⅴ外延异质结构（ MOVPE）以非气态来源配置。将有关层宽，成分变化和内在应变的结果与通过高分辨率X射线衍射获得的结果进行比较。当电子束位于界面或超细层时，会聚束电子衍射图案取决于聚焦电子透镜的条件。这些条件尤其是聚焦设置和球差。两者都可以通过将“简单”的几何图案拟合到实验图案上来进行测量。通过考虑这些因素，CBED应变测量结果显示为0.8 nm的高空间分辨率。

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