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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >The magnetic properties of Ni_xZn_(1-x)Fe_2O_4 films fabricated by alternative sputtering technology
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The magnetic properties of Ni_xZn_(1-x)Fe_2O_4 films fabricated by alternative sputtering technology

机译：交替溅射技术制备的Ni_xZn_（1-x）Fe_2O_4薄膜的磁性

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摘要

Ni_xZn_(1-x)Fe_2O_4 (0.2 <= x <= 0.7) thin films with various compositions are prepared by alternative sputtering technology from the two targets with the composition NiFe_2O_4 and ZnFe_2O_4. The films are deposited on (1 11) Si substrates directly and buffered with ZnFe_2O_4 underlayer, respectively, at room temperature and then annealed in air at 850 deg C. For unbuffered films with the increasing of Zn content, the saturation magnetization M_s increases firstly and then decreases when x = 0.40 the M_s reaches the maximum value about 400 emu/cc, while the coercivity H_c decreases monotonously. The films grown on substrates with ZnFe_2O_4 underlayer exhibit better magnetic properties than those deposited on directly Si substrates which indicates the importance of lattice match and structural similarity between the film and the underlayer.
机译：通过交替溅射技术，从具有成分NiFe_2O_4和ZnFe_2O_4的两个靶材制备交替组成的Ni_xZn_（1-x）Fe_2O_4（0.2 <= x <= 0.7）薄膜。将膜直接沉积在（11 11）Si衬底上，并分别在室温下用ZnFe_2O_4底层缓冲，然后在850℃的空气中退火。对于随Zn含量增加而无缓冲的膜，饱和磁化强度M_s首先增加，然后当x = 0.40时M_s达到最大值，约为400 emu / cc，而矫顽力H_c单调降低。在具有ZnFe_2O_4底层的基底上生长的薄膜比直接在Si基底上沉积的薄膜具有更好的磁性，这表明晶格匹配和薄膜与底层之间结构相似的重要性。

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