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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Structural and photoemission investigations of a new pseudo binary semimagnetic semiconductor: Sn_(1-x)Mn_xSe_2
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Structural and photoemission investigations of a new pseudo binary semimagnetic semiconductor: Sn_(1-x)Mn_xSe_2

机译：新型伪二元半磁半导体Sn_（1-x）Mn_xSe_2的结构和光发射研究

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摘要

Sn_(1-x)Mn_xSe_2 crystals have been grown by a modified Bridgman method aiming to form a new semimagnetic semiconductor whose particularity will be to have a layered CdI_2-type crystal structure. This paper reports the first detailed structural and photoemission study of this new material. X-ray diffraction analysis performed on two different samples showed that only one had the expected lattice symmetry, the other one being a mixture of SnSe and a-MnSe phases. Although the preparation method of these specimen was the same they differed by the manganese quantity inserted to substitute tin in the SnSe_2 lattice. This study also reveals that Mn-solubility into this lattice is not high. Photoelectron spectroscopy using X-ray and synchrotron radiation were also carried on. As it was expected, chemical states of tin and selenium in layered Sn_(1_x)Mn_xSe_2 are Sn~(4+) and Se~(2-), respectively. Manganese is present as Mn~(2+) ion, like it is the case in II_(1-x)Mn_xVI materials. Investigations of layered Sn~(1-x)Mn_xSe_2 valence band revealed that the Mn 3d density of states is constituted of localized states at 3.5 eV of binding energy with delocalized states at lower and higher energy. Differences in Mn 3d density of states have been observed with respect to a biphased Sn~(1-x)Mn_xSe_2 compound.
机译：Sn_（1-x）Mn_xSe_2晶体已通过改进的Bridgman方法生长，旨在形成一种新型的半磁性半导体，其特殊性将具有分层的CdI_2型晶体结构。本文报道了这种新材料的首次详细结构和光发射研究。对两个不同样品进行的X射线衍射分析表明，只有一个样品具有预期的晶格对称性，另一个样品是SnSe和α-MnSe相的混合物。尽管这些样品的制备方法相同，但它们的区别在于插入的锰含量以替代SnSe_2晶格中的锡。该研究还表明，Mn在该晶格中的溶解度不高。还进行了使用X射线和同步加速器辐射的光电子能谱。不出所料，层状Sn_（1_x）Mn_xSe_2中锡和硒的化学态分别为Sn〜（4+）和Se〜（2-）。锰以Mn〜（2+）离子的形式存在，就像II_（1-x）Mn_xVI材料中的情况一样。对层状Sn〜（1-x）Mn_xSe_2价带的研究表明，Mn 3d态密度由结合能为3.5 eV的局部态和较低和较高能量的离域态组成。对于双相Sn〜（1-x）Mn_xSe_2化合物，已经观察到Mn 3d态密度的差异。

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