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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching
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Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

机译：通过光增强化学湿蚀刻制造的基于氮化物的肖特基二极管和HFET

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摘要

Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0 nm/mm for GaN, Al_(0.175)Ga_(0.825)N, Al_(0.23)Ga_(0.77)N, and Al_(0.4)Ga_(0.6)N, respectively. It was also found that we could achieve a high Al_(0.175)Ga_(0.825)N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated I_D larger than 850 mA/mm and a maximum g_m about 163 mS/mm from PEC wet etched HFET with a 0.5 mu m gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller.
机译：使用光增强化学（PEC）湿法蚀刻技术来蚀刻GaN和AlGaN外延层。结果发现，GaN，Al_（0.175）Ga_（0.825）N，Al_（0.23）Ga_（0.77）N和Al_（0.4）Ga_（）的最大蚀刻速率分别为510、1960、300和0 nm / mm。 0.6）N。还发现我们可以实现12.6的高Al_（0.175）Ga_（0.825）N与GaN蚀刻速率比。氮化物基肖特基二极管和异质结构场效应晶体管（HFET）也通过PEC湿法刻蚀制造。发现我们可以从栅极长度为0.5μm的PEC湿法蚀刻HFET中获得大于850 mA / mm的饱和I_D和约163 mS / mm的最大g_m。与干蚀刻器件相比，从PEC湿蚀刻器件中观察到的泄漏电流也较小。

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