...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants
【24h】

Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants

机译：用于非晶和亚非晶植入物的硅中缺陷演化的原子建模

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Solid phase epitaxial regrowth of pre-amorphizing implants has received significant attention as a method to achieve high dopant activation with minimal diffusion at low implant temperatures and suppress channelling. Therefore, a good understanding of the amorphization and regrowth mechanisms is required in process simulators. We present an atomistic amorphization and recrystallization model that uses the interstitial-vacancy (Ⅰ-Ⅴ) pair as a building block to describe the amorphous phase. Ⅰ-? pairs are locally characterized by the number of neighbouring Ⅰ-Ⅴ pairs. This feature captures the damage generation and the dynamical annealing during ion implantation, and also explains the annealing behaviour of amorphous layers and amorphous pockets.
机译：预非晶化植入物的固相外延再生是作为一种在低植入物温度下实现高掺杂物活化和最小扩散并抑制沟道效应的方法而引起了广泛关注。因此，在过程仿真器中需要对非晶化和再生长机制有很好的了解。我们提出了一种原子间无定形和再结晶模型，该模型使用间隙-空位（Ⅰ-Ⅴ）对作为描述非晶相的基础。我对的特征在于相邻的Ⅰ-Ⅴ对的数量。此功能捕获了离子注入过程中的损伤产生和动态退火，还解释了非晶层和非晶腔的退火行为。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号