Arsenic diffusion in Si and strained Si_xGe_(1-x) alloys at 1000℃

Suresh Uppal; J.M. Bonar; Jing Zhang; A.F.W. Willoughby

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Arsenic diffusion in Si and strained Si_xGe_(1-x) alloys at 1000℃

机译：砷在1000℃下在Si和应变Si_xGe_（1-x）合金中的扩散

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摘要

Results of arsenic diffusion under intrinsic diffusion conditions in Si and SiGe (5, 10% Ge) alloys are presented. Epitaxial Si and compres-sively strained SiGe structures with buried marker layers of arsenic were grown using Molecular Beam Epitaxy. The concentration profiles before and after Rapid Thermal Annealing at 1000℃ have been measured using SIMS. An enhancement of intrinsic arsenic diffusivity in SiGe compared to Si is observed, in agreement with literature. However, for As in Si_(0.95)Ge_(0.05) strain seems to compensate the effect of enhancement due to Ge chemical effect although for Si_(0.9)Ge_(0.1) the chemical effect overcomes the retardation due to strain.

机译：给出了在本征扩散条件下，Si和SiGe（5，10％Ge）合金中砷扩散的结果。使用分子束外延法生长具有砷的掩埋标记层的外延Si和强制应变的SiGe结构。使用SIMS测量了1000℃快速热退火前后的浓度分布。与文献相一致，与Si相比，观察到SiGe中固有的砷扩散率提高。然而，对于Si_（0.95）Ge_（0.05）中的As，由于Ge化学效应，应变似乎补偿了增强效应，尽管对于Si_（0.9）Ge_（0.1），化学效应克服了由于应变引起的延迟。

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来源
《Materials Science and Engineering. B, Solid-State Materials for Advanced Technology》 |2004年第12期|p.349-351|共3页
作者
Suresh Uppal; J.M. Bonar; Jing Zhang; A.F.W. Willoughby;
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作者单位

Materials Research Group, School of Engineering Sciences, University of Southampton, Highfield Southampton SO17 1BJ, UK;

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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
SiGe alloys; arsenic; diffusion; strain;

机译：SiGe合金;砷;扩散;应变;

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Arsenic diffusion in Si and strained Si_xGe_(1-x) alloys at 1000℃

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