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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >A simulation study of charge transfer doping for ultra-shallow source/drain extensions
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A simulation study of charge transfer doping for ultra-shallow source/drain extensions

机译：超浅源极/漏极扩展区电荷转移掺杂的仿真研究

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摘要

To improve the performance of extremely scaled MOSFETs, we propose the use of a novel charge transfer-doped source/drain extension (CTE); i.e., a source/drain extension (SDE) consisting of an inversion layer induced by ionized impurities placed immediately above the Si surface. The performance of MOSFETs with CTEs (CTE-MOS) has been compared to that of MOSFETs with conventional SDEs (conv.MOS) for the 45 nm technology node by two-dimensional device simulations. The use of CTEs significantly improves the short-channel characteristics, while degrading the drive current by ～ 10% at a fixed gate length L_(gate) because of their higher resistance than that of conventional SDEs. In the comparison with the conv.MOS assuming that the L_(gate) fluctuation is +-20% and that the off-state subthreshold leakage current should be lowered to a specified value at L_(gate) = -20%, the CTE-MOS is found to have 1-1.4 times the drive current at L_(gate) = +20% and 0.3-0.4 times the threshold voltage roll-off. These better features of the CTE-MOS are attributed to the excellent immunity to the short-channel effects owing to the extreme shallowness of CTEs.
机译：为了提高超大规模MOSFET的性能，我们建议使用一种新型的电荷转移掺杂的源极/漏极扩展（CTE）。即，源极/漏极扩展部分（SDE）由由放置在Si表面正上方的电离杂质引起的反型层组成。通过二维器件仿真，已将具有CTE的MOSFET（CTE-MOS）与具有传统SDE的MOSFET（对MOS）的性能进行了比较，用于45 nm技术节点。 CTE的使用显着改善了短通道特性，同时在固定的栅极长度L_（gate）下驱动电流降低了约10％，因为它们的电阻比常规SDE高。在与转换MOS的比较中，假设L_（gate）波动为+ -20％，并且在L_（gate）= -20％时，应将关态亚阈值泄漏电流降低至指定值，CTE-在L_（gate）= + 20％时，发现MOS的驱动电流为1-1.4倍，阈值电压下降的MOS为0.3-0.4倍。 CTE-MOS的这些更好的功能归因于CTE的极浅，从而对短通道效应具有出色的抗扰性。

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