...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Critical doping requirements for ≤ 65 nm device manufacturing
【24h】

Critical doping requirements for ≤ 65 nm device manufacturing

机译：≤65 nm器件制造的关键掺杂要求

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Ion implantation has long been considered a commodity in semiconductor device manufacturing. Historically, precision of beam incident angle has not been a critical requirement. However, with the miniaturization of semiconductor devices, the traditional tolerance to errors in beam incident angle is becoming less acceptable. This places significant constraints on the ability of implanters to meet the precision requirements of dopant placement necessary to sustain device performance. In this paper, we will discuss the effect of beam incident angle in CMOS doping applications. Device parametric performance was investigated using TCAD simulations. With implant energies for source drain extension (SDE) reaching sub keV levels, these implants are typically performed in decel mode. Depending on the design of the implanter, use of decel mode can introduce a finite amount of energy contamination. Effects of this energy contamination on device performance were also investigated using TCAD simulations.
机译：长期以来，离子注入一直被认为是半导体器件制造中的一种商品。从历史上看，光束入射角的精度并不是关键要求。然而，随着半导体器件的小型化，对光束入射角误差的传统容忍度变得越来越难以接受。这对注入机满足维持器件性能所必需的掺杂剂放置的精度要求的能力提出了重大限制。在本文中，我们将讨论光束入射角在CMOS掺杂应用中的影响。使用TCAD仿真研究了设备参数性能。随着用于源极漏极扩展（SDE）的注入能量达到亚keV水平，这些注入通常以减速模式执行。根据注入机的设计，使用减速模式可能会引入有限量的能量污染。还使用TCAD仿真研究了这种能量污染对设备性能的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号