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High resolution deep level transient spectroscopy and process-induced defects in silicon

机译：高分辨率深层瞬态光谱法和硅中的工艺缺陷

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High resolution, or Laplace, deep level transient spectroscopy (LDLTS) enables the identification of very closely spaced energetic levels in a semiconductor bandgap. DLTS may resolve peaks with a separation of tens of electron volts, but LDLTS can resolve defect energy separations as low as a few MeV. In this paper, we present results from LDLTS applied to ion implantation-induced defects in silicon, with particular emphasis on characterisation of end-of-range interstitial type defects. Silicon was implanted with a variety of ions from mass 28 to 166. A combination of LDLTS and direct capture cross-section measurements was employed to show that electrically active small extended defects were present in the as-implanted samples. Larger dislocations were then generated in Si by oxygenation to act as a control sample. These stacking faults had typical lengths of microns, and their electrical activity was subsequently characterised by LDLTS. This was to establish the sensitivity of LDLTS to defects whose carrier capture is characterised by a non-exponential filling process and an evolving band structure as carrier capture proceeds. The LDLTS spectra show several components in capacitance transients originating from both the end-of-rangc defects, and the stacking faults, and also clearly show that the carrier emission rates reduce as these extended defects fill with carriers. The end-of-range defects and the stacking faults are shown to have the same electrical behaviour.
机译：高分辨率或拉普拉斯深能级瞬态光谱法（LDLTS）能够识别半导体带隙中间隔非常近的高能级。 DLTS可以以几十个电子伏特的间隔分辨峰，但LDLTS可以分辨低至几个MeV的缺陷能量间隔。在本文中，我们介绍了LDLTS应用于离子注入引起的硅中缺陷的结果，特别着重于范围末端间隙类型缺陷的表征。硅被注入了质量从28到166的各种离子。LDLTS和直接捕获横截面测量的组合被用来显示在植入的样品中存在电活性小的扩展缺陷。然后通过氧化在Si中产生更大的位错，以用作对照样品。这些堆垛层错的典型长度为微米，其电活动随后通过LDLTS表征。这是为了确定LDLTS对缺陷的敏感度，这些缺陷的载流子捕获以非指数填充过程和随着载流子捕获的进行而形成的能带结构为特征。 LDLTS频谱显示出电容瞬变中的几个分量，这些电容瞬变既来自范围末端缺陷，又来自堆叠故障，并且还清楚地表明，随着这些扩展的缺陷被载流子填充，载流子发射率降低。范围末端缺陷和堆垛层错显示为具有相同的电气性能。

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