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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Electrical characterization of TiSi/Si_(1-x-y)Ge_xC_y Schottky diodes
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Electrical characterization of TiSi/Si_(1-x-y)Ge_xC_y Schottky diodes

机译：TiSi / Si_（1-x-y）Ge_xC_y肖特基二极管的电气特性

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摘要

TiSi/Si_(1-x-y)Ge_xC_y Schottky diodes have been fabricated on both Si_(1-x-y)Ge_xC_y layers with and without a Si-cap layer and Rutherford backscattering spectroscopy (RBS) was used to verify the thickness and composition of the silicide phases. The forward- and reverse-current voltage (Ⅰ-Ⅴ) characteristics for the diodes were measured in the temperature range of 100-300 K to determine the Schottky barrier height (φ_b) and ideality factor (n). It has been found that the ideality factor decreases with an increase in temperature while the barrier height increases, The effect of the Si-cap layer on electrical characteristics of the Si_(1-x-y)Ge_xC_y Schottky diodes is also studied. Results are compared with a similar TiSi/Si Schottky diode processed in the same run.
机译：TiSi / Si_（1-xy）Ge_xC_y肖特基二极管已经在具有和不具有Si盖层的Si_（1-xy）Ge_xC_y层上制造，并且使用卢瑟福背散射光谱（RBS）来验证硅化物的厚度和成分阶段。在100-300 K的温度范围内测量二极管的正向和反向电流电压（Ⅰ-Ⅴ）特性，以确定肖特基势垒高度（φ_b）和理想因子（n）。已经发现，随着温度的增加，理想因数随着势垒高度的增加而降低。还研究了硅盖层对Si_（1-x-y）Ge_xC_y肖特基二极管的电学特性的影响。将结果与在相同运行中处理的类似TiSi / Si肖特基二极管进行比较。

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